high voltage transistor Jilin Sino Microelectronics 3DD4613H 92 FJ suitable for chargers and ballasts
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The 3DD4613H is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for chargers, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS compliant
Technical Specifications
| Order Code | Marking | Package | IC (A) | VCEO (V) | VCES (V) | PC (TO-92-FJ) (W) | PC (IPAK/DPAK) (W) |
| 3DD4613H-TJ-A | 4613H | TO-92-FJ | 1.5 | 500 | 900 | 1 | - |
| 3DD4613H-TJ-AR | 4613H | TO-92-FJ | 1.5 | 500 | 900 | 1 | - |
| 3DD4613H-TJ-C | 4613H | TO-92-FJ | 1.5 | 500 | 900 | 1 | - |
| 3DD4613H-TJ-CR | 4613H | TO-92-FJ | 1.5 | 500 | 900 | 1 | - |
| 3DD4613H-R-A | 4613H | DPAK | 1.5 | 500 | 900 | - | 20 |
| 3DD4613H-R-AR | 4613H | DPAK | 1.5 | 500 | 900 | - | 20 |
| 3DD4613H-R-C | 4613H | DPAK | 1.5 | 500 | 900 | - | 20 |
| 3DD4613H-R-CR | 4613H | DPAK | 1.5 | 500 | 900 | - | 20 |
| 3DD4613H-V-C | 4613H | IPAK | 1.5 | 500 | 900 | - | 20 |
| 3DD4613H-V-CR | 4613H | IPAK | 1.5 | 500 | 900 | - | 20 |
| 3DD4613H-V-B | 4613H | IPAK | 1.5 | 500 | 900 | - | 20 |
| 3DD4613H-V-BR | 4613H | IPAK | 1.5 | 500 | 900 | - | 20 |
| Parameter | Symbol | Value (min) | Value (typ) | Value (max) | Unit | Tests conditions |
| Collector- Emitter VoltageVBE=0 | VCES | - | - | 900 | V | - |
| Collector- Emitter VoltageIB=0 | VCEO | - | - | 500 | V | - |
| Emitter-Base Voltage | VEBO | - | - | 9 | V | - |
| Collector CurrentDC | IC | - | - | 1.5 | A | - |
| Collector Currentpulse | ICP | - | - | 3.0 | A | - |
| Total Dissipation (TO-92-FJ) | PC | - | - | 1 | W | - |
| Total Dissipation (IPAK/DPAK) | PC | - | - | 20 | W | - |
| Junction Temperature | Tj | - | - | 150 | - | |
| Storage Temperature | Tstg | -55 | - | 150 | - | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 500 | 560 | - | V | IC=10mA,IB=0 |
| Collector-Base Breakdown Voltage | V(BR)CBO | 900 | 1000 | - | V | IC=1mA,IE=0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 9 | 14 | - | V | IE=1mA,IC=0 |
| Collector Cutoff Current | ICBO | - | - | 1 | A | VCB=900V, IE=0 |
| Collector Cutoff Current | ICEO | - | - | 10 | A | VCE=500V,IB=0 |
| Emitter Cutoff Current | IEBO | - | - | 0.5 | A | VEB=7V, IC=0 |
| DC Current Gain | Hfe | 20 | 26 | - | - | VCE=5V, IC=10Ma |
| DC Current Gain | Hfe | 20 | 30 | 40 | - | VCE=5V, IC=0.2A |
| DC Current Gain | Hfe | 5 | 8 | 20 | - | VCE=5V, IC=1.0A |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.7 | - | 1.5 | V | IC=1.0A, IB=0.25A |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | 0.3 | 0.8 | V | IC=0.5A, IB=0.1A |
| Base-Emitter Saturation Voltage | VBE(sat) | - | 1.0 | 1.5 | V | IC=1.0A, IB=250Ma |
| Fall Time | tf | - | - | 1.0 | s | VCC=125V IC=0.1A, IB1=-IB2=0.02A |
| Storage Time | ts | - | - | 10 | s | - |
| Transition Frequency | Ft | 4 | - | - | MHz | VCE=10V, IC=0.1A |
| Thermal Resistance Junction Ambient (TO-92-FJ) | Rth(j-a) | - | - | 125 | /W | - |
| Thermal Resistance Junction Case (IPAK) | Rth(j-c) | - | - | 12.5 | /W | - |
| Thermal Resistance Junction Case (DPAK) | Rth(j-c) | - | - | 6.25 | /W | - |
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Hefei Purple Horn E-Commerce Co., Ltd.
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Sellina