High Voltage Silicon NPN Darlington Power Transistor ISC 2SD798 with 2 Volt Maximum Saturation Voltage

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Product Description

Product Overview

The ISC 2SD798 is a Silicon NPN Darlington Power Transistor designed for high-voltage switching igniter applications. It features a high Collector-Emitter Sustaining Voltage of 300V(Min), a low Collector-Emitter Saturation Voltage of 2.0V(Max) @ IC=4A, and a high DC Current Gain of 1500(Min) @ IC=2A, VCE=2V. This transistor offers minimum lot-to-lot variations for robust device performance and reliable operation.

Product Attributes

Brand: ISC
Trademark: ISC & ISCsemi
Origin: Silicon
Material: NPN Darlington Power Transistor

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ.	Max	Unit
ABSOLUTE MAXIMUM RATINGS
VCBO	Collector-Base Voltage				600	V
VCEO	Collector-Emitter Voltage				300	V
VEBO	Emitter-Base Voltage				5	V
IC	Collector Current-Continuous				6	A
IB	Base Current-Continuous				1.0	A
PC	Collector Power Dissipation	@ TC=25			30	W
TJ	Junction Temperature				150
Tstg	Storage Temperature Range		-55		150
THERMAL CHARACTERISTICS
Rth j-c	Thermal Resistance,Junction to Case			4.16		/W
ELECTRICAL CHARACTERISTICS
VCEO(SUS)	Collector-Emitter Sustaining Voltage	IC= 30mA ; L= 40mH	300			V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= 4A; IB= 40mA			2.0	V
VBE(sat)	Base-Emitter Saturation Voltage	IC= 4A; IB= 40mA			2.5	V
ICBO	Collector Cutoff Current	VCB= 600V; IE= 0			500	A
IEBO	Emitter Cutoff Current	VEB= 5V; IC=0			2	mA
hFE -1	DC Current Gain	IC= 2A ; VCE= 2V	1500
hFE -2	DC Current Gain	IC= 4A ; VCE= 2V			20
COB	Output Capacitance	IE= 0 ; VCB= 50V;ftest= 1.0MHz			35	pF
Switching times
ton	Turn-on Time	IC= 4A , IB1= IB2= 40mA RL= 25; VCC100V		1.0		s
tstg	Storage Time			8.0		s
tf	Fall Time			5.0		s