High Collector Current Silicon NPN Power Transistor ISC 2SC2233 with 60V Collector Emitter Breakdown Voltage

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Product Description

Product Overview

The INCHANGE Semiconductor 2SC2233 is a silicon NPN power transistor designed for high-performance applications. It features a high collector-emitter breakdown voltage of 60V(Min) and a DC current gain of 30(Min) at VCE=5V, IC=1A. This transistor offers high collector current capability and high collector power dissipation, making it suitable for demanding applications such as TV horizontal deflection output.

Product Attributes

Brand: INCHANGE Semiconductor
Material: Silicon
Type: NPN Power Transistor

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ.	Max	Unit
Collector-Emitter Breakdown Voltage	VCEO		60			V
DC Current Gain	hFE	IC= 1A ; VCE= 5V	30		150
Collector Current-Continuous	IC				4	A
Collector Current-Peak	ICM				10	A
Base Current-Continuous	IB				1	A
Collector Power Dissipation @ Ta=25	PC	@ Ta=25			1.5	W
Collector Power Dissipation @ TC=25	PC	@ TC=25			40	W
Junction Temperature	TJ				150
Storage Temperature Range	Tstg		-55		150
Collector-Base Voltage	VCBO				200	V
Emitter-Base Voltage	VEBO				5	V
Collector-Emitter Saturation Voltage	VCE(sat)	IC= 4A; IB=0.4A		1.0		V
Base-Emitter Saturation Voltage	VBE(sat)	IC= 4A; IB=0.4A		1.5		V
Collector Cutoff Current	ICBO	VCB= 170V ; IE= 0			10	A
Emitter Cutoff Current	IEBO	VEB= 5V; IC= 0			10	A
DC Current Gain	hFE	IC= 4A ; VCE= 5V	20
Current-GainBandwidth Product	fT	IC= 500mA; VCE= 5V		8		MHz