Silicon NPN Power Transistor ISC 2SD1047 Designed for High Current and Audio Frequency Amplifier Output Stages

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Product Description

Product Overview

The ISC 2SD1047 is a Silicon NPN Power Transistor designed for high-current applications. It features a high collector-emitter breakdown voltage of 140V, good linearity of hFE, and a wide area of safe operation. This transistor is recommended for 60W audio frequency amplifier output stages and is the complement to the 2SB817 type. It offers minimum lot-to-lot variations for robust performance and reliable operation.

Product Attributes

Brand: ISC
Trademark: ISC & ISCsemi
Origin: Silicon
Type: NPN Power Transistor

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ.	Max	Unit
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC= 30mA ; RBE=	140			V
Collector-Base Breakdown Voltage	V(BR)CBO	IC=1mA; IE= 0			160	V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE= 5mA; IC= 0			6	V
Collector-Emitter Saturation Voltage	VCE(sat)	IC= 5.0A; IB= 0.5A		0.6	2.5	V
Base -Emitter On Voltage	VBE(on)	IC= 1A ; VCE= 5V		1.5		V
Collector Cutoff Current	ICBO	VCB= 80V ; IE= 0			100	A
Emitter Cutoff Current	IEBO	VEB= 4V; IC= 0			100	A
DC Current Gain (hFE-1)	hFE-1	IC= 1A ; VCE= 5V	60		200
DC Current Gain (hFE-2)	hFE-2	IC= 6A ; VCE= 5V			20
Output Capacitance	COB	IE= 0;VCB= 10V;ftest= 1.0MHz			210	pF
Current-GainBandwidth Product	fT	IC= 1A ; VCE= 5V		15		MHz
Turn-on Time	ton	IC= 1A ,RL= 20, IB1= IB2= 0.1A,VCC= 20V		0.26		s
Storage Time	tstg			6.88		s
Fall Time	tf			0.68		s
Collector Current-Continuous	IC				12	A
Collector Current-Pulse	ICP				15	A
Collector Power Dissipation	PC	@ TC=25			100	W
Junction Temperature	TJ				150
Storage Temperature Range	Tstg		-40	~	150