Silicon NPN Darlington Transistor ISC 2N6039 with 80 Volt Collector Emitter Sustaining Voltage Rating

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Product Description

Product Overview

The ISC 2N6039 is a Silicon NPN Darlington Power Transistor designed for general-purpose switching and amplifier applications. It features a high DC current gain of 750(Min)@IC=2A and a Collector-Emitter Sustaining Voltage of 80V(Min). It is a complement to the 2N6036 type.

Product Attributes

Brand: ISC
Trademark: ISC & ISCsemi
Material: Silicon

Technical Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VCEO(SUS)	Collector-Emitter Sustaining Voltage	IC= 50mA; IB= 0	80		V
VCE(sat)-1	Collector-Emitter Saturation Voltage	IC= 2 A ;IB= 8mA		2.0	V
VCE(sat)-2	Collector-Emitter Saturation Voltage	IC= 4A ;IB= 40mA		3.0	V
VBE(sat)	Base-Emitter Saturation Voltage	IC= 4A ;IB= 40mA		4.0	V
VBE(on)	Base-Emitter On Voltage	IC= 2A ;VCE= 3V		2.8	V
ICEX	Collector Cutoff Current	VCE= 80V; VBE= -1.5V		0.1	mA
ICEX	Collector Cutoff Current	VCE= 80V; VBE= -1.5V;TC= 125		0.5	mA
ICBO	Collector Cutoff Current	VCB= 80V; IE= 0		0.1	mA
ICEO	Collector Cutoff Current	VCE= 80V; IB= 0		0.1	mA
IEBO	Emitter Cutoff Current	VEB= 5V; IC= 0		2.0	mA
hFE-1	DC Current Gain	IC= 0.5 A ; VCE= 3V	500
hFE-2	DC Current Gain	IC= 2A ; VCE= 3V	750	25000
hFE-3	DC Current Gain	IC= 4 A ; VCE= 3V	100

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	80	V
VCEO	Collector-Emitter Voltage	80	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current-Continuous	4	A
ICM	Collector Current-Peak	8	A
IB	Base Current	0.1	A
PC	Collector Power Dissipation TC=25	40	W
TJ	Junction Temperature	150
Tstg	Storage Temperature Range	-65~150
Rth j-c	Thermal Resistance,Junction to Case	3.12	/W