NPN Power Transistor ISC 2SD2583 Featuring High DC Current Gain and Operation for Audio Frequency Amplifier

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Product Description

Product Overview

The 2SD2583 is a Silicon NPN Power Transistor designed for audio frequency amplifier and switching applications. It features high collector current capability (IC= 5A), low saturation voltage (VCE(sat)= 0.15V Max @ IC=1A, IB= 50mA), and high DC current gain (hFE= 150~600 @ IC= 1A). Its robust device performance and reliable operation are ensured by minimum lot-to-lot variations.

Product Attributes

Brand: isc
Trademark: isc & iscsemi
Origin: Silicon
Material: NPN Power Transistor

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ.	Max	Unit
Collector-Base Voltage	VCBO				30	V
Collector-Emitter Voltage	VCEO				30	V
Emitter-Base Voltage	VEBO				6	V
Collector Current-Continuous	IC				5.0	A
Collector Current-Pulse	ICP				10	A
Base Current-Continuous	IB				2.0	A
Collector Power Dissipation @ Ta=25	PC	@ Ta=25			1.0	W
Collector Power Dissipation @ TC=25	PC	@ TC=25			10	W
Junction Temperature	TJ				150
Storage Temperature Range	Tstg		-55		150
Collector-Emitter Saturation Voltage	VCE(sat)-1	IC= 1A; IB= 50mA			0.15	V
Collector-Emitter Saturation Voltage	VCE(sat)-2	IC= 2A; IB= 0.1A			0.25	V
Collector-Emitter Saturation Voltage	VCE(sat)-3	IC= 4A; IB= 0.2A			0.5	V
Base-Emitter Saturation Voltage	VBE(sat)	IC= 2A; IB= 0.1A			1.5	V
Collector Cutoff Current	ICBO	VCB= 30V; IE= 0			0.1	A
Emitter Cutoff Current	IEBO	VEB= 6V; IC= 0			0.1	A
DC Current Gain	hFE-1	IC= 1A ; VCE= 2V	150		600
DC Current Gain	hFE-2	IC= 4A ; VCE= 2V	50
Current-GainBandwidth Product	fT	IC= 50mA ; VCE= 10V		120		MHz
Output Capacitance	COB	IE= 0 ; VCB= 10V, ftest= 1MHz		77		pF