Power Amplifier Silicon PNP Transistor ISC 2SA1869 with Collector Emitter Breakdown Voltage and Operation
Price:
Negotiable
MOQ:
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Delivery Time:
Negotiable
Product Description
Product Overview
The 2SA1869 is a Silicon PNP Power Transistor from ISC, designed for power amplifier applications. It features a collector-emitter breakdown voltage of -50V, good linearity of hFE, and is a complement to type 2SC4935. Its robust device performance and reliable operation are ensured by minimum lot-to-lot variations.
Product Attributes
- Brand: ISC
- Trademark: ISC & ISCsemi
- Material: Silicon
- Type: PNP Power Transistor
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ. | Max | Unit |
| V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -10mA; IB= 0 | -50 | V | ||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC= -2A; IB= -0.2A | -0.6 | V | ||
| VBE(on) | Base-Emitter On Voltage | IC= -0.5A; VCE= -2V | -1.0 | V | ||
| ICBO | Collector Cutoff Current | VCB= -50V; IE= 0 | -1.0 | A | ||
| IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 | -1.0 | A | ||
| hFE | DC Current Gain | IC= -0.5A; VCE= -2V | 70 | 240 | ||
| IC= -2.5A; VCE= -2V | 30 | |||||
| COB | Collector Output Capacitance | IE= 0; VCB= -10V; f= 1MHz | 35 | pF | ||
| fT | Current-GainBandwidth Product | IC= -0.5A; VCE= -2V | 100 | MHz |
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