Silicon NPN Power Transistor ISC 2SD1402 Offering High Switching Speed and 1500V Breakdown Voltage
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The ISC 2SD1402 is a Silicon NPN Power Transistor designed for color TV horizontal output applications. It features a high breakdown voltage of 1500V (Min), high switching speed, and minimum lot-to-lot variations for robust device performance and reliable operation.
Product Attributes
- Brand: ISC
- Trademark: ISC & ISCsemi
- Material: Silicon
- Type: NPN Power Transistor
- Model: 2SD1402
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ. | Max | Unit |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC= 1mA; IE= 0 | 1500 | V | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC= 30mA; RBE= | 800 | V | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE= 1mA; IC= 0 | 7 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC= 4A; IB= 0.8A | 5.0 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat) | IC= 4A; IB= 0.8A | 1.5 | V | ||
| Collector Cutoff Current | ICBO | VCB= 750V; IE= 0 | 10 | A | ||
| Emitter Cutoff Current | IEBO | VEB= 5V; IC= 0 | 1.0 | mA | ||
| DC Current Gain | hFE | IC= 1A; VCE= 5V | 8 | |||
| Current-GainBandwidth Product | fT | IC= 1A; VCE= 10V | 3 | MHz | ||
| Fall Time | tf | IC= 4A, IB1= 0.8A, IB2= 1.6A; RL= 50; VCC= 200V | 0.7 | s |
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