NPN Silicon Power Transistor ISC 2N4923 Offering Minimum Lot to Lot Variations for Circuit Operation

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Product Description

ISC Silicon NPN Power Transistor 2N4923

The ISC 2N4923 is a Silicon NPN Power Transistor designed for driver circuits, switching, and amplifier applications. It features a Collector-Emitter Sustaining Voltage of 80V (Min), a low Collector Saturation Voltage of 0.6V (Max.) at IC=1A, and a wide Area of Safe Operation. It is a complement to the 2N4920 type, offering minimum lot-to-lot variations for robust device performance and reliable operation.

Product Attributes

Brand: ISC
Trademark: ISC & ISCsemi
Origin: Not specified
Material: Silicon
Color: Not specified
Certifications: Not specified

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ.	Max	Unit
VCEO(SUS)	Collector-Emitter Sustaining Voltage	IC= 50mA; IB= 0	80			V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= 1A; IB= 0.1A			0.6	V
VBE(sat)	Base-Emitter Saturation Voltage	IC= 1A; IB= 0.1A			1.3	V
VBE(on)	Base-Emitter On Voltage	IC= 1A ; VCE= 1V			1.3	V
ICEX	Collector Cutoff Current	VCE=80V;VBE(off)= -1.5V		0.1		mA
ICEX	Collector Cutoff Current	VCE=80V;VBE(off)= -1.5V;TC=125		0.5		mA
ICEO	Collector Cutoff Current	VCE= 40V; IB= 0			0.5	mA
ICBO	Collector Cutoff Current	VCB= 80V; IE= 0			0.1	mA
IEBO	Emitter Cutoff Current	VEB= 5V; IC= 0			1.0	mA
hFE-1	DC Current Gain	IC= 50mA ; VCE= 1V	40
hFE-2	DC Current Gain	IC= 500mA ; VCE= 1V	30		150
hFE-3	DC Current Gain	IC= 1A ; VCE= 1V	10
fT	Current-GainBandwidth Product	IC= 0.25A;VCE= 10V, ftest= 1MHz			3	MHz
COB	Output Capacitance	IE= 0;VCB= 10V; ftest= 100kHz			100	pF

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	80	V
VCEO	Collector-Emitter Voltage	80	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current-Continuous	1	A
ICM	Collector Current-Peak	3	A
IB	Collector Current-Continuous	1	A
PC	Collector Power Dissipation @ TC=25	30	W
TJ	Junction Temperature	150
Tstg	Storage Temperature Range	-65~150