rugged JIAENSEMI JNG50T120HIMU2 trench IGBT with fast switching and positive temperature coefficient
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Motor drives, PFC, Portable power stations, and other soft switching applications. These devices are reliable, rugged, and feature a positive temperature coefficient and fast switching capabilities.
Product Attributes
- Brand: JIAEN
- Certifications: Halogen Free and Green Devices Available
Technical Specifications
| Parameter | Value | Units | Conditions | ||
| Absolute Maximum Ratings | |||||
| VCES Collector-Emitter Voltage | 1200 | V | |||
| VGES Gate-Emitter Voltage | + 30 | V | |||
| IC Continuous Collector Current | 100 | A | ( TC=25 ) | ||
| IC Continuous Collector Current | 50 | A | ( TC=100) | ||
| ICM Pulsed Collector Current | 200 | A | (Note 1) | ||
| IF Diode Continuous Forward Current | 50 | A | ( TC=100 ) | ||
| IFM Diode Maximum Forward Current | 100 | A | (Note 1) | ||
| tsc Short Circuit Withstand Time | 8 | us | |||
| PD Maximum Power Dissipation | 833 | W | ( TC=25 ) | ||
| TJ Operating Junction Temperature Range | -55 to +175 | ||||
| Thermal Characteristics | |||||
| Rth j-c Thermal Resistance, Junction to case for IGBT | 0.18 | / W | |||
| Rth j-c Thermal Resistance, Junction to case for Diode | 0.37 | / W | |||
| Rth j-a Thermal Resistance, Junction to Ambient | 40 | / W | |||
| Electrical Characteristics ( IGBT ) | |||||
| BVCES Collector-Emitter Breakdown Voltage | 1200 | V | VGE= 0V, IC= 1mA | ||
| ICES Collector-Emitter Leakage Current | - | 10 | uA | VCE= 1200V, VGE= 0V | |
| IGES Gate Leakage Current, Forward | - | + 200 | nA | VGE= + 20V, VCE= 0V | |
| VGE(th) Gate Threshold Voltage | 4.93 | - | 6.93 | V | VGE= VCE, IC= 250uA |
| VCE(sat) Collector-Emitter Saturation Voltage | - | 1.55 | - | V | VGE=15V, IC= 50A |
| Qg Total Gate Charge | - | 291 | - | nC | VCC=960V VGE=15V IC=50A |
| Qge Gate-Emitter Charge | - | 81 | - | nC | |
| Qgc Gate-Collector Charge | - | 110 | - | nC | |
| td(on) Turn-on Delay Time | - | 44 | - | ns | VCC=600V VGE=15V IC=50A RG=5 Inductive Load TC=25 |
| tr Turn-on Rise Time | - | 95 | - | ns | |
| td(off) Turn-off Delay Time | - | 190 | - | ns | |
| tf Turn-off Fall Time | - | 264 | - | ns | |
| Eon Turn-on Switching Loss | - | 2.57 | - | mJ | |
| Eoff Turn-off Switching Loss | - | 3.73 | - | mJ | |
| Ets Total Switching Loss | - | 6.31 | - | mJ | |
| Cies Input Capacitance | - | 8408 | - | pF | VCE=25V VGE=0V f = 1MHz |
| Coes Output Capacitance | - | 197 | - | pF | |
| Cres Reverse Transfer Capacitance | - | 55 | - | pF | |
| Electrical Characteristics of Diode | |||||
| VF Diode Forward Voltage | - | 2.0 | 3.5 | V | IF=50A |
| trr Diode Reverse Recovery Time | - | 94 | - | ns | VCE = 600V IF= 50A DiF/dt = 200A/us |
| Irr Diode peak Reverse Recovery Current | - | 9.7 | - | A | |
| Qrr Diode Reverse Recovery Charge | - | 225 | - | nC | |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina