Power Amplifier Silicon NPN Transistor ISC 2SC2073 Featuring 150V Collector Emitter Breakdown Voltage and Operation

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The ISC 2SC2073 is a Silicon NPN Power Transistor designed for power amplifier and vertical output applications. It features a wide area of safe operation, a collector-emitter breakdown voltage of 150V (Min), and serves as a complement to the 2SA940 type. The device offers minimum lot-to-lot variations for robust performance and reliable operation.

Product Attributes

Brand: ISC
Trademark: ISC, ISCsemi
Material: Silicon
Type: NPN Power Transistor

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ.	Max	Unit
V(BR)CEO	Collector-Emitter Breakdown Voltage		150			V
VCBO	Collector-Base Voltage				150	V
VCEO	Collector-Emitter Voltage				150	V
VEBO	Emitter-Base Voltage				5	V
IC	Collector Current-Continuous				1.5	A
IB	Base Current-Continuous				0.5	A
PC	Collector Power Dissipation	@ Ta=25			1.5	W
PC	Collector Power Dissipation	@ TC=25			25	W
TJ	Junction Temperature				150
Tstg	Storage Temperature Range		-55		150
VCE(sat)	Collector-Emitter Saturation Voltage	IC= 500mA; IB= 50mA			1.5	V
VBE(on)	Base-Emitter On Voltage	IC= 500mA ; VCE= 10V		0.85		V
ICBO	Collector Cutoff Current	VCB= 120V ; IE= 0			10	A
IEBO	Emitter Cutoff Current	VEB= 5V; IC= 0			10	A
hFE	DC Current Gain	IC= 500mA ; VCE= 10V	40		140
COB	Output Capacitance	IE= 0; VCB= 10V; ftest= 1MHz			35	pF
fT	Current-GainBandwidth Product	IC= 500mA; VCE= 10V			4	MHz