Trench IGBT device JIAENSEMI JNG25T120HJS1 offering soft current turn off and square RBSOA waveforms

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Product Description

Product Overview

JIAEN Trench IGBTs offer lower losses and higher energy efficiency, featuring soft current turn-off waveforms and square RBSOA. They are designed for applications such as motor control, general inverters, and other soft switching applications.

Product Attributes

Brand: JIAEN
Origin: www.jiaensemi.com

Technical Specifications

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
VCES	Collector-Emitter Voltage				1200	V
VGES	Gate-Emitter Voltage				+ 20	V
IC	Continuous Collector Current (TC=25)				50	A
IC	Continuous Collector Current (TC=100)				25	A
ICM	Pulsed Collector Current (Note 1)				100	A
IF	Diode Continuous Forward Current (TC=100)				25	A
IFM	Diode Maximum Forward Current (Note 1)				100	A
tsc	Short Circuit Withstand Time				10	us
PD	Maximum Power Dissipation (TC=25)				428	W
PD	Maximum Power Dissipation (TC=100)				214	W
TJ	Operating Junction Temperature Range		-40		+175
TSTG	Storage Temperature Range		-55		+150
Rth j-c	Thermal Resistance, Junction to case for IGBT				0.35	/ W
Rth j-c	Thermal Resistance, Junction to case for Diode				0.9	/ W
Rth j-a	Thermal Resistance, Junction to Ambient				40	/ W
BVCES	Collector-Emitter Breakdown Voltage	VGE= 0V, IC= 250uA	1200	-	-	V
ICES	Collector-Emitter Leakage Current	VCE= 1200V, VGE= 0V	-	-	250	uA
IGES	Gate Leakage Current, Forward	VGE= + 20V, VCE= 0V	-	-	+ 100	nA
VGE(th)	Gate Threshold Voltage	VGE= VCE, IC=1mA	5.8	6.1	6.3	V
VCE(sat)	Collector-Emitter Saturation Voltage	VGE=15V, IC= 25A	-	1.7	-	V
Qg	Total Gate Charge	VCC=960V VGE=15V IC=25A	-	133	-	nC
td(on)	Turn-on Delay Time	VCC=600V VGE=15V IC=25A RG=10 Inductive Load TC=25	-	31	-	ns
tr	Turn-on Rise Time		-	62	-	ns
td(off)	Turn-off Delay Time		-	184	-	ns
tf	Turn-off Fall Time		-	59	-	ns
Eon	Turn-on Switching Loss		-	2.0	-	mJ
Eoff	Turn-off Switching Loss		-	0.9	-	mJ
Ets	Total Switching Loss		-	2.9	-	mJ
Cies	Input Capacitance	VCE=30V VGE=0V f = 1MHz	-	2080	-	pF
Coes	Output Capacitance		-	105	-	pF
Cres	Reverse Transfer Capacitance		-	20	-	pF
VF	Diode Forward Voltage	IF=25A	-	2.0	-	V
trr	Diode Reverse Recovery Time	VCE = 600V IF= 25A dIF/dt = 250A/us	-	309	-	ns
Irr	Diode peak Reverse Recovery Current		-	7	-	A
Qrr	Diode Reverse Recovery Charge		-	1038	-	nC