Power Electronics Diode JIAENSEMI JCD30S120T6 Silicon Carbide Schottky for SMPS and Renewable Energy
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Product Description
JCD30S120T6 Silicon Carbide Schottky Diode
The JCD30S120T6 is a Silicon Carbide Schottky Diode designed for high-efficiency power applications. It features a positive temperature coefficient for VF, enabling parallel operation without thermal runaway. This unipolar rectifier offers zero reverse recovery current, low leakage current, and temperature-independent switching behavior, leading to essentially no switching losses, higher efficiency, and reduced heatsink requirements. It is ideal for use in Switch Mode Power Supplies (SMPS), 5G base stations, high-efficiency power supplies, photovoltaic inverters, and solar/new energy vehicles.
Product Attributes
- Brand: jiaenSemiconductor
- Material: Silicon Carbide
- Product Number: JCD30S120T6
- Package: TO-247-2
- Part Number: JCD30S120T6
- Package Marking: JCD30S120T6
Technical Specifications
| Symbol | Parameter | Value | Unit | Test Conditions |
| VRRM | Repetitive Peak Reverse Voltage | 1200 | V | |
| VRSM | Surge Peak Reverse Voltage | 1200 | V | |
| VDC | DC Blocking Voltage | 1200 | V | |
| IF | Continuous Forward Current | 79 | A | TC=25C |
| 35 | TC=135C | |||
| 30 | TC=150C | |||
| IFRM | Repetitive Peak Forward Surge Current | 115 | A | TC=25C, tP = 10 ms, Half Sine Wave |
| 65 | TC=110C, tP = 10 ms, Half Sine Wave | |||
| IFSM | Non-Repetitive Peak Forward Surge Current | 340 | A | TC=25C, tp = 8.33ms, Half Sine Wave |
| 240 | TC=110C, tp = 10ms, Half Sine Wave | |||
| Pt | Power Dissipation | 355 | W | TC=25C |
| 150 | TC=110C | |||
| TJ , Tstg | Operating Junction and Storage Temperature | -55 to +175 | C | |
| VF | Forward Voltage | 1.48 | V | IF = 30 A, TJ=25C |
| 1.7 | IF = 30 A, TJ=175C | |||
| IR | Reverse Current | 50 | A | VR = 1200 V, TJ=25C |
| 250 | VR = 1200 V, TJ=175C | |||
| QC | Total Capacitive Charge | 128 | nC | di/dt = 200 A/s, VR = 800 V, IF = 30 A, TJ = 25C |
| C | Total Capacitance | 1921 | pF | VR = 0 V, TJ = 25C, f = 1 MHz |
| 110 | VR = 400 V, TJ = 25C, f = 1 MHz | |||
| 97 | VR = 800 V, TJ = 25C, f = 1 MHz | |||
| EC | Capacitance Stored Energy | 45 | J | VR = 800 V |
| RJC | Thermal Resistance from Junction to Case | 0.43 | C/W |
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