1200V 25A Trench IGBT JIAENSEMI JNG25T120HS designed for high speed switching induction heating UPS
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Product Description
Product Overview
The JNG25T120HS is a 1200V, 25A Trench IGBT from JIAEN Semiconductor designed for high-speed switching applications. It offers lower losses, higher system efficiency, soft current turn-off waveforms, and square RBSOA, making it ideal for induction heating (IH), UPS, general inverters, and other soft switching applications.
Product Attributes
- Brand: JIAEN
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Value | Units | Notes |
| Collector-Emitter Voltage (VCES) | 1200 | V | |
| Gate-Emitter Voltage (VGES) | +30 | V | |
| Continuous Collector Current (IC) @ TC=25 | 50 | A | |
| Continuous Collector Current (IC) @ TC=100 | 25 | A | |
| Pulsed Collector Current (ICM) | 75 | A | Note 1 |
| Diode Continuous Forward Current (IF) @ TC=100 | 25 | A | |
| Diode Maximum Forward Current (IFM) | 75 | A | Note 1 |
| Short Circuit Withstand Time (tsc) | 10 | us | |
| Maximum Power Dissipation (PD) @ TC=25 | 277 | W | |
| Maximum Power Dissipation (PD) @ TC=100 | 111 | W | |
| Operating Junction Temperature Range (TJ) | -40 to +155 | ||
| Storage Temperature Range (TSTG) | -55 to +155 | ||
| Thermal Resistance, Junction to Case (Rth j-c) for IGBT | 0.45 | /W | |
| Thermal Resistance, Junction to Case (Rth j-c) for Diode | 1.5 | /W | |
| Thermal Resistance, Junction to Ambient (Rth j-a) | 40 | /W | |
| Typ. VCE(sat) @ VGE=15V, IC=25A | 2.1 | V |
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