High current IGBT JIAENSEMI JNG25T65AI offering 25A continuous collector current at 100 degrees Celsius

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Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

JNG25T65AI IGBT

JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. They are designed for high-speed switching and provide higher system efficiency with soft current turn-off waveforms and square RBSOA.

Product Attributes

Brand: JIAEN
Model: JNG25T65AI

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Units
Collector-Emitter Voltage	VCES				650	V
Gate-Emitter Voltage	VGES				±30	V
Continuous Collector Current (TC=25)	IC				50	A
Continuous Collector Current (TC=100)	IC				25	A
Pulsed Collector Current (Note 1)	ICM				75	A
Diode Continuous Forward Current (TC=100)	IF				25	A
Diode Maximum Forward Current (Note 1)	IFM				75	A
Short Circuit Withstand Time	tsc				10	µs
Maximum Power Dissipation (TC=25)	PD				69.4	W
Maximum Power Dissipation (TC=100)	PD				27.8	W
Operating Junction Temperature Range	TJ		-55		+150
Storage Temperature Range	TSTG		-55		+150
Thermal Resistance, Junction to case for IGBT	Rth j-c			1.8		/ W
Thermal Resistance, Junction to case for Diode	Rth j-c			3.0		/ W
Thermal Resistance, Junction to Ambient	Rth j-a			65		/ W
Collector-Emitter Breakdown Voltage	BVCES	VGE= 0V, IC= 250uA	650	-	-	V
Collector-Emitter Leakage Current	ICES	VCE= 650V, VGE= 0V	-	-	100	µA
Gate Leakage Current, Forward	IGES	VGE=±20V, VCE= 0V	-	-	±100	nA
Gate Threshold Voltage	VGE(th)	VGE= VCE, IC= 250uA	5.1	-	6.9	V
Collector-Emitter Saturation Voltage	VCE(sat)	VGE=15V, IC= 25A	-	2.1	2.7	V
Total Gate Charge	Qg	VCC=480V VGE=15V IC=25A	-	31.2	-	nC
Gate-Emitter Charge	Qge		-	7.7	-	nC
Gate-Collector Charge	Qgc		-	13.3	-	nC
Turn-on Delay Time	td(on)	VCC=400V VGE=15V IC=25A RG=15Ω Inductive Load TC=25 ℃	-	22	-	ns
Turn-on Rise Time	tr		-	44	-	ns
Turn-off Delay Time	td(off)		-	75	-	ns
Turn-off Fall Time	tf		-	88	-	ns
Turn-on Switching Loss	Eon		-	0.66	-	mJ
Turn-off Switching Loss	Eoff		-	0.49	-	mJ
Total Switching Loss	Ets		-	1.15	-	mJ
Input Capacitance	Cies	VCE=25V VGE=0V f = 1MHz	-	978	-	pF
Output Capacitance	Coes		-	90	-	pF
Reverse Transfer Capacitance	Cres		-	8	-	pF
Diode Forward Voltage	VF	IF=25A	-	1.65	3.0	V
Diode Reverse Recovery Time	trr	VCE = 400V IF= 25ARg=15Ω	-	60	-	ns
Diode peak Reverse Recovery Current	IRR		-	15.6	-	A
Diode Reverse Recovery Charge	Qrr		-	518	-	nC