switch mode power supply MOSFET Jilin Sino Microelectronics JCS640F for electronic lamp ballasts and UPS

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Product Description

Product Overview

The JCS640 is a N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and UPS systems. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.

Product Attributes

Brand: JCS
Certifications: RoHS

Technical Specifications

Order Code	Package	Marking	Main Characteristics	Applications
JCS640S-S-B / JCS640S-S-BR / JCS640S-S-A / JCS640S-S-AR	TO-263	JCS640S	ID: 18.0A, VDSS: 200V, Rdson-max (@Vgs=10V): 0.18, Qg-typ: 47nC	High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, UPS
JCS640C-C-B / JCS640C-C-BR	TO-220C	N/A	ID: 18.0A, VDSS: 200V, Rdson-max (@Vgs=10V): 0.18, Qg-typ: 47nC	High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, UPS
JCS640F-F-B / JCS640F-F-BR	TO-220MF	N/A	ID: 18.0A, VDSS: 200V, Rdson-max (@Vgs=10V): 0.18, Qg-typ: 47nC	High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, UPS

Absolute Maximum Ratings

Parameter	Symbol	JCS640C	JCS640S	JCS640F	Unit
Drain-Source Voltage	VDSS	200	200	200	V
Drain Current -continuous (Tc=25)	ID	18.0*	18.0*	18.0*	A
Drain Current -continuous (Tc=100)	ID	11.4*	11.4*	11.4*	A
Drain Current -pulse (note 1)	IDM	72*	72*	72*	A
Gate-Source Voltage	VGSS	30	30	30	V
Single Pulsed Avalanche Energy (note 2)	EAS	421	421	421	mJ
Avalanche Current (note 1)	IAR	18	18	18	A
Repetitive Avalanche Current (note 1)	EAR	14	14	4.4	mJ
Peak Diode Recovery dv/dt (note 3)	dv/dt	5.5	5.5	5.5	V/ns
Power Dissipation (Tc=25)	PD	140	140	44	W
Power Dissipation (-Derate above 25)	PD	1.12	1.12	0.35	W/
Operating and Storage Temperature Range	TJ, TSTG	-55+150	-55+150	-55+150
Maximum Lead Temperature for Soldering Purposes	TL	300	300	300

Electrical Characteristics

Parameter	Symbol	Tests conditions	Min	Typ	Max	Unit
Off Characteristics
Drain-Source Voltage	BVDSS	ID=250A, VGS=0V	200	-	-	V
Breakdown Voltage Temperature Coefficient	BVDSS /TJ	ID=250A, referenced to 25	-	0.2	-	V/
Zero Gate Voltage Drain Current	IDSS	VDS=200V, VGS=0V, TC=25	-	-	1	A
Zero Gate Voltage Drain Current	IDSS	VDS=160V, TC=125	-	-	10	A
Gate-body leakage current, forward	IGSSF	VDS=0V, VGS =30V	-	-	100	nA
Gate-body leakage current, reverse	IGSSR	VDS=0V, VGS =-30V	-	-	-100	nA
On-Characteristics
Gate Threshold Voltage	VGS(th)	VDS = VGS , ID=250A	2.0	-	4.0	V
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V , ID=9.0A	-	0.15	0.18
Forward Transconductance	gfs	VDS = 40V , ID=9.0Anote 4	-	13.5	-	S
Dynamic Characteristics
Input capacitance	Ciss	-	-	1330	1760	pF
Output capacitance	Coss	-	-	181	245	pF
Reverse transfer capacitance	Crss	VDS=25V, VGS=0V, f=1.0MHZ	-	48	65	pF

Thermal Characteristics

Parameter	Symbol	JCS640C/S	JCS640F	Unit
Thermal Resistance, Junction to Case	Rth(j-c)	0.89	2.85	/W
Thermal Resistance, Junction to Ambient	Rth(j-A)	62.5	62.5	/W

Switching Characteristics

Parameter	Symbol	Tests conditions	Min	Typ	Max	Unit
Turn-On delay time	td(on)	VDD=100V,ID=18A,RG=25 VGS =10V note 45	-	54	70	ns
Turn-On rise time	td(on)	VDD=100V,ID=18A,RG=25 VGS =10V note 45	-	104	162	ns
Turn-Off delay time	td(off)	VDD=100V,ID=18A,RG=25 VGS =10V note 45	-	327	395	ns
Turn-Off Fall time	tf	VDD=100V,ID=18A,RG=25 VGS =10V note 45	-	107	145	ns
Total Gate Charge	Qg	VDS =160V , ID=18A VGS =10Vnote 45	-	47	62	nC
Gate-Source charge	Qgs	VDS =160V , ID=18A VGS =10Vnote 45	-	8	-	nC
Gate-Drain charge	Qgd	VDS =160V , ID=18A VGS =10Vnote 45	-	22	-	nC

Drain-Source Diode Characteristics and Maximum Ratings

Parameter	Symbol	Tests conditions	Min	Typ	Max	Unit
Maximum Continuous Drain-Source Diode Forward Current	IS	-	-	18	A
Maximum Pulsed Drain-Source Diode Forward Current	ISM	-	-	72	A
Maximum Continuous Drain-Source Diode Forward Current	VSD	VGS=0V, IS=18A	-	1.48	-	V
Reverse recovery time	trr	-	-	-	195	ns
Reverse recovery charge	Qrr	VGS=0V, IS=18A dIF/dt=100A/s (note 4)	-	1.48	-	C