Energy NPT IGBT JIAENSEMI JNG25N120AI suitable for industrial inverter and induction heating power modules
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Product Description
JNG25N120AI IGBT
JIAEN NPT IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA using NPT technology.
Product Attributes
- Brand: JIAEN
- Technology: NPT IGBT
Technical Specifications
| Parameter | Condition | Value | Unit |
| Collector-Emitter Voltage (VCES) | 1200 | V | |
| Gate-Emitter Voltage (VGES) | +30 | V | |
| Continuous Collector Current (IC) | TC=25 | 45 | A |
| Continuous Collector Current (IC) | TC=100 | 25 | A |
| Pulsed Collector Current (ICM) | Note 1 | 80 | A |
| Diode Continuous Forward Current (IF) | TC=100 | 25 | A |
| Diode Maximum Forward Current (IFM) | Note 1 | 60 | A |
| Short Circuit Withstand Time (tsc) | VGE=15V, VCC960V, TJ150 | 10 | s |
| Maximum Power Dissipation (PD) | TC=25 | 210 | W |
| Maximum Power Dissipation (PD) | TC=100 | 100 | W |
| Operating Junction Temperature Range (TJ) | -55 to +150 | ||
| Storage Temperature Range (TSTG) | -55 to +150 | ||
| Thermal Resistance, Junction to Case (Rth j-c) for IGBT | 0.48 | /W | |
| Thermal Resistance, Junction to Case (Rth j-c) for Diode | 0.87 | /W | |
| Thermal Resistance, Junction to Ambient (Rth j-a) | 40 | /W | |
| Collector-Emitter Breakdown Voltage (BVces) | VGE=0V, IC=250A | 1200 | V |
| Collector-Emitter Leakage Current (ICES) | VCE=1200V, VGE=0V | 250 | A |
| Gate Leakage Current, Forward (IGES) | VGE=30V, VCE=0V | 100 | nA |
| Gate Leakage Current, Reverse | VGE=-30V, VCE=0V | -100 | nA |
| Gate Threshold Voltage (VGE(th)) | VGE=VCE, IC=250A | 4.5 - 5.0 - 5.5 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VGE=15V, IC=25A, TC=25 | 2.2 - 2.6 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VGE=15V, IC=25A, TC=125 | 2.7 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VGE=15V, IC=25A, TC=150 | 3.0 | V |
| Total Gate Charge (Qg) | VCC=960V, VGE=15V, IC=25A | 130 | nC |
| Gate-Emitter Charge (Qge) | 30 | nC | |
| Gate-Collector Charge (Qgc) | 70 | nC | |
| Turn-on Delay Time (td(on)) | VCC=600V, VGE=15V, IC=25A, RG=10, Inductive Load, TC=25 | 22 | ns |
| Turn-on Rise Time (tr) | VCC=600V, VGE=15V, IC=25A, RG=10, Inductive Load, TC=25 | 35 | ns |
| Turn-off Delay Time (td(off)) | VCC=600V, VGE=15V, IC=25A, RG=10, Inductive Load, TC=25 | 290 | ns |
| Turn-off Fall Time (tf) | VCC=600V, VGE=15V, IC=25A, RG=10, Inductive Load, TC=25 | 170 | ns |
| Turn-on Switching Loss (Eon) | VCC=600V, VGE=15V, IC=25A, RG=10, Inductive Load, TC=25 | 2.2 | mJ |
| Turn-off Switching Loss (Eoff) | VCC=600V, VGE=15V, IC=25A, RG=10, Inductive Load, TC=25 | 1.4 | mJ |
| Total Switching Loss (Ets) | VCC=600V, VGE=15V, IC=25A, RG=10, Inductive Load, TC=25 | 3.6 | mJ |
| Input Capacitance (Cies) | VCE=25V, VGE=0V, f=1MHz | 1250 | pF |
| Output Capacitance (Coes) | VCE=25V, VGE=0V, f=1MHz | 210 | pF |
| Reverse Transfer Capacitance (Cres) | VCE=25V, VGE=0V, f=1MHz | 150 | pF |
| Integrated gate resistor (RGint) | 3.8 | ||
| Diode Forward Voltage (VF) | IF=25A, TC=25 | 2.3 - 2.5 | V |
| Diode Reverse Recovery Time (trr) | VCE=600V, IF=25A, dIF/dt=500A/s, TC=25 | 190 | ns |
| Diode peak Reverse Recovery Current (Irr) | VCE=600V, IF=25A, dIF/dt=500A/s, TC=25 | 20 | A |
| Diode Reverse Recovery Charge (Qrr) | VCE=600V, IF=25A, dIF/dt=500A/s, TC=25 | 1600 | nC |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
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Contact Person
Sellina