Power transistor with middling voltage Jilin Sino-Microelectronics 3DD4128PL fast switching NPN device

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Product Description

MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

The 3DD4128PL is a high-reliability NPN power transistor designed for applications requiring middling breakdown voltage, high current capability, and fast switching speeds. It is suitable for energy-saving lights, electronic ballasts, electronic transformers, and general power amplifier circuits. This RoHS-compliant product offers environmental advantages.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd.
Certifications: RoHS (implied by "RoHS" and "RoHS product")
Halogen Free: No

Technical Specifications

Order Code	Marking	Package	Packaging	IC (A)	VCEO (V)	PC (TO-126) (W)	PC (TO-220) (W)	Thermal Resistance (TO-126) (/W)	Thermal Resistance (TO-220) (/W)
3DD4128PL-O-M-N-C	4128PL	TO-126	Bag	5	200	40	-	3.125	-
3DD4128PL-O-Z-N-C	D4128PL	TO-220	Bag	5	200	-	75	-	1.67

Electrical Characteristics

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage (VBE=0)	VCES	-	350	-	-	V
Collector-Emitter Voltage (IB=0)	VCEO	-	200	-	-	V
Emitter-Base Voltage	VEBO	-	7	-	-	V
Collector Current (DC)	IC	-	5	-	-	A
Collector Current (pulse)	ICP	-	10	-	-	A
Base Current (DC)	IB	-	2	-	-	A
Base Current (pulse)	IBP	-	4	-	-	A
Breakdown Voltage CEO	V(BR)CEO	IC=10mA,IB=0	200	-	-	V
Breakdown Voltage CBO	V(BR)CBO	IC=1mA,IB=0	350	-	-	V
Breakdown Voltage EBO	V(BR)EBO	IE=1mA,IC=0	7	-	-	V
Collector Cut-off Current	ICBO	VCB=350V, IE=0	-	-	100	A
Collector Cut-off Current	ICEO	VCE=200V,IB=0	-	-	50	A
Emitter Cut-off Current	IEBO	VEB=7V, IC=0	-	-	10	A
DC Current Gain	Hfe(1)	VCE =5V, IC=0.8A	8	-	50	-
DC Current Gain	Hfe(2)	VCE =5V, IC=3A	8	-	-	-
Collector-Emitter Saturation Voltage	VCE(sat)(1)	IC=1A, IB=0.2A	-	-	0.8	V
Collector-Emitter Saturation Voltage	VCE(sat)(2)	IC=3A, IB=0.6A	-	-	1.5	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=3A, IB=0.6A	-	-	1.6	V
Fall Time	tf	-	-	-	0.7	S
Storage Time	ts	VCC=24V IC=0.5A,IB1=-IB2=0.1A	-	-	4	S
Transition Frequency	fT	VCE=10V, IC=0.5A	4	-	-	MHz

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal Resistance Junction Case TO-126	Rth(j-c)	3.125	/W
Thermal Resistance Junction Case TO-220	Rth(j-c)	1.67	/W

Absolute Maximum Ratings

Parameter	Symbol	Value	Unit
Total Dissipation (TO-126)	PC	40	W
Total Dissipation (TO-220)	PC	75	W
Junction Temperature	Tj	150
Storage Temperature	Tstg	-55~+150