Trench IGBT JIAENSEMI JNG30T65HS1 with 30A Diode Continuous Forward Current and High Speed Switching

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Product Description

Product Overview

The JNG30T65HS1 is a Trench IGBT from JIAEN Semiconductor, designed for lower losses and higher energy efficiency. It features high-speed switching and soft current turn-off waveforms, making it suitable for applications requiring higher system efficiency.

Product Attributes

Brand: JIAEN Semiconductor
Product Line: Trench IGBTs

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Units
Collector-Emitter Voltage	VCES				650	V
Gate-Emitter Voltage	VGES				+30	V
Continuous Collector Current (TC=25)	IC				60	A
Continuous Collector Current (TC=100)	IC				30	A
Pulsed Collector Current (Note 1)	ICM				90	A
Diode Continuous Forward Current (TC=100)	IF				30	A
Diode Maximum Forward Current (Note 1)	IFM				90	A
Short Circuit Withstand Time	tsc				10	us
Maximum Power Dissipation (TC=25)	PD				297	W
Maximum Power Dissipation (TC=100)	PD				119	W
Operating Junction Temperature Range	TJ		-55		+150
Storage Temperature Range	TSTG		-55		+150
Collector-Emitter Breakdown Voltage	BVCES	VGE= 0V, IC= 250uA	650			V
Collector-Emitter Leakage Current	ICES	VCE= 650V, VGE= 0V			100	uA
Gate Leakage Current, Forward	IGES	VGE=20V, VCE= 0V			100	nA
Gate Threshold Voltage	VGE(th)	VGE= VCE, IC= 250uA	5.1		6.9	V
Collector-Emitter Saturation Voltage	VCE(sat)	VGE=15V, IC= 30A		2.0	2.5	V
Total Gate Charge	Qg	VCC=480V VGE=15V IC=30A		594		nC
Gate-Emitter Charge	Qge			119		nC
Gate-Collector Charge	Qgc			374		nC
Turn-on Delay Time	td(on)	VCC=400V VGE=15V IC=30A RG=15 Inductive Load TC=25		19		ns
Turn-on Rise Time	tr			65		ns
Turn-off Delay Time	td(off)			86		ns
Turn-off Fall Time	tf			98		ns
Turn-on Switching Loss	Eon			1.3		mJ
Turn-off Switching Loss	Eoff			0.5		mJ
Total Switching Loss	Ets			1.8		mJ
Input Capacitance	Cies	VCE=25V VGE=0V f = 1MHz		1340		pF
Output Capacitance	Coes			98		pF
Reverse Transfer Capacitance	Cres			11.8		pF
Diode Forward Voltage	VF	IF=30A		1.5	3.0	V
Diode Reverse Recovery Time	trr	VCE = 400V IF= 30A Rg=15		148		ns
Diode peak Reverse Recovery Current	Irr			13.8		A
Diode Reverse Recovery Charge	Qrr			1055		nC
Thermal Resistance, Junction to case for IGBT	Rth j-c			0.42		/ W
Thermal Resistance, Junction to case for Diode	Rth j-c			1.4		/ W
Thermal Resistance, Junction to Ambient	Rth j-a			40		/ W