Jilin Sino Microelectronics 3DD4242DT 92 transistor for energy saving lights and power supply circuits

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Product Description

Product Overview

The 3DD4242D is a high-performance transistor designed for applications requiring high voltage and current capabilities. It features high breakdown voltage, high current capacity, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This RoHS-compliant product offers excellent performance and durability.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd
Certifications: RoHS

Technical Specifications

Order Code	Marking	Package	Halogen-Reel	Halogen-Free-Reel	Halogen-Bag	Halogen-Free-Bag	Halogen-Tube	Halogen-Free-Tube
3DD4242D-NB-A	4242D	SOT-89	✔
3DD4242D-NB-AR	4242D	SOT-89		✔
3DD4242D-NB-C	4242D	SOT-89			✔
3DD4242D-NB-CR	4242D	SOT-89				✔
3DD4242D-T-A	4242D	TO-92	✔
3DD4242D-T-AR	4242D	TO-92		✔
3DD4242D-T-C	4242D	TO-92			✔
3DD4242D-T-CR	4242D	TO-92				✔
3DD4242D-T1-A	4242D	TO-92-F1	✔
3DD4242D-T1-AR	4242D	TO-92-F1		✔
3DD4242D-T1-C	4242D	TO-92-F1			✔
3DD4242D-T1-CR	4242D	TO-92-F1				✔
3DD4242D-R-A	4242D	DPAK	✔
3DD4242D-R-AR	4242D	DPAK		✔
3DD4242D-R-C	4242D	DPAK			✔
3DD4242D-R-CR	4242D	DPAK				✔
3DD4242D-V-C	4242D	IPAK			✔
3DD4242D-V-CR	4242D	IPAK				✔
3DD4242D-V-B	4242D	IPAK					✔
3DD4242D-V-BR	4242D	IPAK						✔
3DD4242D-M-C	4242D	TO-126			✔
3DD4242D-M-CR	4242D	TO-126				✔
3DD4242D-M-B	4242D	TO-126					✔
3DD4242D-M-BR	4242D	TO-126						✔
3DD4242D-M1-C	4242D	TO-126S			✔
3DD4242D-M1-CR	4242D	TO-126S				✔
3DD4242D-M1-B	4242D	TO-126S					✔
3DD4242D-M1-BR	4242D	TO-126S						✔

Parameter	Symbol	Value	Unit	Test Conditions
Collector-Emitter Voltage (VBE=0)	VCES	700	V
Collector-Emitter Voltage (IB=0)	VCEO	400	V
Emitter-Base Voltage	VEBO	9	V
Collector Current (DC)	IC	1.5	A
Collector Current (pulse)	ICP	3.0	A
Total Dissipation (TO-92/SOT-89)	PC	1	W	(Tc=25)
Total Dissipation (DPAK/IPAK)	PC	10	W	(Tc=25)
Total Dissipation (TO-126(S))	PC	20	W	(Tc=25)
Junction Temperature	Tj	150
Storage Temperature	Tstg	-55~+150
Thermal Resistance Junction Ambient (TO-92/TO-92-F1/SOT-89)	Rth(j-a)	125	/W
Thermal Resistance Junction Case (DPAK/IPAK)	Rth(j-c)	12.5	/W
Thermal Resistance Junction Case (TO-126(S))	Rth(j-c)	6.25	/W
Collector-Emitter Breakdown Voltage	V(BR)CEO	400	V	Ic=10mA,IB=0
Collector-Emitter Breakdown Voltage	V(BR)CEO	470	V	Ic=10mA,IB=0
Collector-Base Breakdown Voltage	V(BR)CBO	700	V	Ic=1mA,IE=0
Collector-Base Breakdown Voltage	V(BR)CBO	800	V	Ic=1mA,IE=0
Emitter-Base Breakdown Voltage	V(BR)EBO	9	V	IE=1mA,Ic=0
Emitter-Base Breakdown Voltage	V(BR)EBO	16	V	IE=1mA,Ic=0
Collector Cut-off Current	ICBO	5	A	VCB=700V, IE=0
Emitter Cut-off Current	ICEO	10	A	VCE=400V,IB=0
Emitter Cut-off Current	IEBO	5	A	VEB=7V, IC=0
DC Current Gain	hFE	19	-	VCE=10V, IC=100mA
DC Current Gain	hFE	22	-	VCE=10V, IC=100mA
DC Current Gain	hFE	25	-	VCE=10V, IC=100mA
DC Current Gain	hFE	3.0	-	VCE=5V, IC=1.5A
DC Current Gain	hFE	7.0	-	VCE=5V, IC=1.5A
Collector-Emitter Saturation Voltage	VCE(sat)	0.2	V	IC=0.5A, IB=100mA
Collector-Emitter Saturation Voltage	VCE(sat)	0.8	V	IC=0.5A, IB=100mA
Base-Emitter Saturation Voltage	VBE(sat)	0.9	V	IC=0.5A, IB=100mA
Base-Emitter Saturation Voltage	VBE(sat)	1.2	V	IC=0.5A, IB=100mA
Switching Time (ts)	ts	1.0	S	IC=0.25A
Switching Time (ts)	ts	4.0	S	IC=0.25A
Transition Frequency	fT	4	MHz	VCE=10V, Ic=0.1A