trench IGBT JIAENSEMI JNG50T65HMU1 optimized for soft switching applications and power conversion systems

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Product Description

Product Overview

The JNG50T65HMU1 is a Trench IGBT from JIAEN Semiconductor designed to reduce conduction loss, improve switching performance, and enhance avalanche energy. It features high speed switching, a positive temperature coefficient, and a reliable, rugged design with low VCE(sat). This IGBT is suitable for applications such as motor drives, UPS, Boost converters, portable power stations, and other soft switching applications.

Product Attributes

Brand: JIAEN
Origin: www.jiaensemi.com

Technical Specifications

Parameter	Symbol	Value	Units	Conditions
Collector-Emitter Voltage	VCES	650	V
Gate-Emitter Voltage	VGES	+30	V
Continuous Collector Current (TC=25)	IC	100	A	(TC=25)
Continuous Collector Current (TC=100)	IC	50	A	(TC=100)
Pulsed Collector Current	ICM	150	A	(Note 1)
Diode Continuous Forward Current (TC=100)	IF	50	A	(TC=100)
Diode Maximum Forward Current	IFM	150	A	(Note 1)
Short Circuit Withstand Time	tsc	8	us
Maximum Power Dissipation (TC=25)	PD	250	W	(TC=25)
Maximum Power Dissipation (TC=100)	PD	125	W	(TC=100)
Operating Junction Temperature Range	TJ	-55 to +175
Storage Temperature Range	TSTG	-55 to +175
Thermal Resistance, Junction to Case (IGBT)	Rth j-c	0.60	/W
Thermal Resistance, Junction to Case (Diode)	Rth j-c	0.55	/W
Thermal Resistance, Junction to Ambient	Rth j-a	40	/W
Collector-Emitter Breakdown Voltage	BVCES	650	V	VGE=0V, IC=250uA
Collector-Emitter Leakage Current	ICES	-	100	uA	VCE=650V, VGE=0V
Gate Leakage Current, Forward	IGES	-	200	nA	VGE=20V, VCE=0V
Gate Threshold Voltage	VGE(th)	4.3	6.3	V	VGE=VCE, IC=1mA
Collector-Emitter Saturation Voltage	VCE(sat)	-	2.2	V	VGE=15V, IC=50A
Total Gate Charge	Qg	-	183	nC	VCC=520V, VGE=15V, IC=50A
Gate-Emitter Charge	Qge	-	26	nC
Gate-Collector Charge	Qgc	-	83	nC
Turn-on Delay Time	td(on)	-	24	ns	VCC=400V, VGE=15V, IC=50A, RG=5, Inductive Load, TC=25
Turn-on Rise Time	tr	-	88	ns
Turn-off Delay Time	td(off)	-	124	ns
Turn-off Fall Time	tf	-	73	ns
Turn-on Switching Loss	Eon	-	1.4	mJ
Turn-off Switching Loss	Eoff	-	1.2	mJ
Total Switching Loss	Ets	-	2.6	mJ
Input Capacitance	Cies	-	3356	pF	VCE=25V, VGE=0V, f=1MHz
Output Capacitance	Coes	-	179	pF
Reverse Transfer Capacitance	Cres	-	93	pF
Diode Forward Voltage	VF	-	1.85	V	IF=50A
Diode Reverse Recovery Time	trr	-	136	ns	VCE=400V, IF=50A, dif/dt=200A/ns
Diode peak Reverse Recovery Current	Irr	-	6.9	A
Diode Reverse Recovery Charge	Qrr	-	350	nC