Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency switching power supplies

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Product Description

Product Overview

The 3DD13003A is a high voltage, fast-switching NPN power transistor designed for various electronic applications including chargers, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, while being a RoHS-compliant product.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd.
Certifications: RoHS

Technical Specifications

Parameter	Symbol	Value	Unit	Tests conditions	Min	Typ	Max
Collector-Emitter Voltage (VBE=0)	VCES	700	V
Collector-Emitter Voltage (IB=0)	VCEO	450	V
Emitter-Base Voltage	VEBO	9	V
Collector Current (DC)	IC	1.5	A
Collector Current (pulse)	ICP	3.0	A
Total Dissipation (TO-92-FJ/TO-92-FJ-F1)	PC	1	W
Total Dissipation (DPAK/IPAK)	PC	10	W
Total Dissipation (@TO-126/TO-126-FJ)	PC	20	W
Total Dissipation (TO-220)	PC	40	W
Junction Temperature	Tj	150
Storage Temperature	Tstg	-55~+150
Breakdown Voltage Collector-Emitter	V(BR)CEO	450	V	IC=10mA,IB=0	450	500
Breakdown Voltage Collector-Base	V(BR)CBO	700	V	IC=1mA,IE=0	700	830
Breakdown Voltage Emitter-Base	V(BR)EBO	9	V	IE=1mA,IC=0	9	13
Collector Cut-off Current	ICBO	100	A	VCB=700V, IE=0			100
Collector Cut-off Current	ICEO	50	A	VCE=450V,IB=0			50
Emitter Cut-off Current	IEBO	10	A	VEB=7V, IC=0			10
DC Current Gain	hFE	6-40		VCE=5V, IC=5mA	6	20	40
DC Current Gain	hFE	8-40		VCE=10V, IC=200mA	8	25	40
DC Current Gain	hFE	4-11		VCE=5V, IC=1.5A	4	11
Collector-Emitter Saturation Voltage	VCE(sat)	0.8	V	IC=0.5A, IB=0.1A		0.15	0.8
Collector-Emitter Saturation Voltage	VCE(sat)	2.0	V	IC=1.5A, IB=0.5A		0.5	2.0
Base-Emitter Saturation Voltage	VBE(sat)	1.8	V	IC=1.0A, IB=0.25A		0.6	1.8
Fall Time	tf	0.7	S	VCC=24V IC=0.5A,IB1=-IB2=0.1A			0.7
Storage Time	ts	4	S	VCC=24V IC=0.5A,IB1=-IB2=0.1A			4
Transition Frequency	fT	4	MHz	VCE=10V, Ic=0.2A	4
Thermal Resistance Junction Ambient (TO-92-FJ/TO-92-FJ-F1)	Rth(j-a)	125	/W
Thermal Resistance Junction Case (TO-92-FJ/TO-92-FJ-F1)	Rth(j-c)	49	/W
Thermal Resistance Junction Case (DPAK/IPAK)	Rth(j-c)	12.5	/W
Thermal Resistance Junction Case (TO-126)	Rth(j-c)	6.25	/W
Thermal Resistance Junction Case (TO-220)	Rth(j-c)	3.125	/W