NPN transistor Jilin Sino Microelectronics 3DD4243DY designed for high frequency switching power supplies

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Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The 3DD4243D is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, high-frequency power transformers, and general power amplifier circuits. This product is RoHS compliant.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd.
Certifications: RoHS compliant, Halogen Free (No)
Origin: China

Technical Specifications

Model	Package	IC (A)	VCEO (V)	PC (TO-92) (W)	PC (TO-251) (W)	PC (TO-126(S)) (W)	PC (TO-220) (W)	Order Code	Marking	Halogen Free	Packaging
3DD4243D(T/I/M/Z)	TO-92	2.0	400	1	-	-	-	3DD4243DT-O-T-B-A	4243DT	NO	Brede
3DD4243D(T/I/M/Z)	TO-92	2.0	400	1	-	-	-	3DD4243DT-O-T-N-C	4243DT	NO	Bag
3DD4243D(T/I/M/Z)	TO-251	2.0	400	-	10	-	-	3DD4243DI-O-I-N-B	4243DI	NO	Tube
3DD4243D(T/I/M/Z)	TO-251	2.0	400	-	10	-	-	3DD4243DI-O-I-N-C	4243DI	NO	Bag
3DD4243D(T/I/M/Z)	TO-126	2.0	400	-	-	20	-	3DD4243DM-O-M-N-B	4243DM	NO	Tube
3DD4243D(T/I/M/Z)	TO-126	2.0	400	-	-	20	-	3DD4243DM-O-M-N-C	4243DM	NO	Bag
3DD4243D(T/I/M/Z)	TO-126S	2.0	400	-	-	20	-	3DD4243DM-O-MS-B-B	4243DM	NO	Tube
3DD4243D(T/I/M/Z)	TO-126S	2.0	400	-	-	20	-	3DD4243DM-O-MS-B-C	4243DM	NO	Bag
3DD4243D(T/I/M/Z)	TO-220	2.0	400	-	-	-	40	3DD4243DZ-O-Z-N-C	4243DZ	NO	Bag
3DD4243D(T/I/M/Z)	TO-220	2.0	400	-	-	-	40	3DD4243DZ-O-Z-N-B	4243DZ	NO	Tube

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage (VBE=0)	VCES	-	-	-	700	V
Collector-Emitter Voltage (IB=0)	VCEO	-	-	-	400	V
Emitter-Base Voltage	VEBO	-	-	-	9	V
Collector Current (DC)	IC	-	-	-	2.0	A
Collector Current (pulse)	ICP	-	-	-	4.0	A
Collector-Emitter Breakdown Voltage	V(BR)CEO	Ic=10mA,IB=0	400	460	-	V
Collector-Open Breakdown Voltage	V(BR)CBO	Ic=1mA,IE=0	700	800	-	V
Emitter-Open Breakdown Voltage	V(BR)EBO	IE=1mA,Ic=0	9	16	-	V
Collector Cut-off Current	ICBO	VCB=700V, IE=0	-	-	5	A
Emitter Cut-off Current	IEBO	VEB=9V, IC=0	-	-	5	A
DC Current Gain	hFE	VCE=5V, IC=200mA	19	22	25	-
DC Current Gain	hFE	VCE=5V, IC=2.0A	4	8	-	-
Collector-Emitter Saturation Voltage	VCE(sat)	IC=2.0A, IB=0.4A	-	0.8	1.1	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=1.0A, IB=0.2A	-	1.0	1.2	V
Forward Transfer Current Ratio	fT	VCE=10V, Ic=0.1A	4	-	-	MHz
Switching Time (fall time)	tf	-	-	-	0.7	S
Switching Time (storage time)	ts	VCC=24V IC=0.25A,IB1=-IB2=0.05A	-	-	5	S