Jilin Sino Microelectronics 3DD4613H NPN transistor designed for various power amplifier applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The 3DD4613H is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for battery chargers, electronic ballasts, high-frequency switching power supplies, and general power amplifier circuits. This product is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | Halogen-Reel | Halogen-Free-Reel | Halogen-Bag | Halogen-Free-Bag | Halogen-Tube | Halogen-Free-Tube | Main Characteristics | Applications |
| 3DD4613H-TJ-A | 4613H | TO-92-FJ | ✔ | IC: 1.5A VCEO: 500V VCES: 900V PC(TO-92-FJ): 1W | Battery charger Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier | |||||
| 3DD4613H-TJ-AR | ✔ | |||||||||
| 3DD4613H-R-A | 4613H | DPAK | ✔ | IC: 1.5A VCEO: 500V VCES: 900V PC(DPAK): 20W | Battery charger Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier | |||||
| 3DD4613H-R-AR | ✔ | |||||||||
| 3DD4613H-V-C | 4613H | IPAK | ✔ | IC: 1.5A VCEO: 500V VCES: 900V PC(IPAK): 20W | Battery charger Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier | |||||
| 3DD4613H-V-CR | ✔ | |||||||||
| 3DD4613H-V-B | 4613H | IPAK | ✔ | IC: 1.5A VCEO: 500V VCES: 900V PC(IPAK): 20W | Battery charger Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier | |||||
| 3DD4613H-V-BR | ✔ |
| Parameter | Symbol | Value (min) | Value (typ) | Value (max) | Unit | Test Conditions |
| Collector-Emitter Voltage (VBE=0) | VCES | 900 | V | |||
| Collector-Emitter Voltage (IB=0) | VCEO | 500 | V | |||
| Emitter-Base Voltage | VEBO | 9 | V | |||
| Collector Current (DC) | IC | 1.5 | A | |||
| Collector Current (pulse) | ICP | 3.0 | A | |||
| Total Dissipation (TO-92-FJ) | PC | 1 | W | |||
| Total Dissipation (IPAK/DPAK) | PC | 20 | W | |||
| Junction Temperature | Tj | 150 | ℃ | |||
| Storage Temperature | Tstg | -55 | +150 | ℃ | ||
| Breakdown Voltage Collector-Emitter | V(BR)CEO | 500 | 560 | V | IC=10mA,IB=0 | |
| Breakdown Voltage Collector-Base | V(BR)CBO | 900 | 1000 | V | IC=1mA,IE=0 | |
| Breakdown Voltage Emitter-Base | V(BR)EBO | 9 | 14 | V | IE=1mA,IC=0 | |
| Collector Cut-off Current | ICBO | 1 | µA | VCB=900V, IE=0 | ||
| Collector Cut-off Current | ICEO | 10 | µA | VCE=500V,IB=0 | ||
| Emitter Cut-off Current | IEBO | 0.5 | µA | VEB=7V, IC=0 | ||
| DC Current Gain | Hfe | 20 | 26 | VCE=5V, IC=10mA | ||
| DC Current Gain | Hfe | 20 | 30 | 40 | VCE=5V, IC=0.2A | |
| DC Current Gain | Hfe | 5 | 8 | 20 | VCE=5V, IC=1.0A | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.7 | 1.5 | V | IC=1.0A, IB=0.25A | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.3 | 0.8 | V | IC=0.5A, IB=0.1A | |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.0 | 1.5 | V | IC=1.0A, IB=250Ma | |
| Fall Time | tf | 1.0 | µs | VCC=125V IC=0.1A, IB1=-IB2=0.02A | ||
| Storage Time | ts | 10 | µs | |||
| Transition Frequency | Ft | 4 | MHz | VCE=10V, IC=0.1A | ||
| Thermal Resistance Junction Ambient | Rth(j-a) | 125 | ℃/W | TO-92-FJ | ||
| Thermal Resistance Junction Case | Rth(j-c) | 12.5 | ℃/W | IPAK | ||
| Thermal Resistance Junction Case | Rth(j-c) | 6.25 | ℃/W | DPAK |
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Sellina