n channel mosfet Jilin Sino Microelectronics JCS20N60FH with 600 volt vdss and to 220mf package design
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Product Description
Product Overview
The JCS20N60FH is an N-channel MOSFET designed for high-efficiency switching power supplies and electronic lamp ballasts. It features low gate charge, fast switching speeds, and high dv/dt capability, along with 100% avalanche testing for enhanced reliability. This RoHS-compliant product is available in TO-220MF package variants.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
- Material: Not specified
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Order Code | Marking | Package | ID | VDSS | Rds(on)(@Vgs=10V)-MAX | Qg-TYP |
| JCS20N60FH-F-B | N/A | TO-220MF | 20 A | 600 V | 0.39 | 50nC |
| JCS20N60FH-F-BR | N/A | TO-220MF | 20 A | 600 V | 0.39 | 50nC |
| Parameter | Symbol | Value | Unit | Tests conditions |
| Drain-Source Voltage | VDSS | 600 | V | |
| Drain Current -continuous (Tc=25) | ID | 20.0 | A | |
| Drain Current -continuous (Tc=100) | ID | 12.5 | A | |
| Drain Current -pulse | IDM | 80 | A | (note 1) |
| Gate-Source Voltage | VGSS | 30 | V | |
| Single Pulsed Avalanche Energy | EAS | 450 | mJ | (note 2) |
| Avalanche Current | IAR | 20.0 | A | (note 1) |
| Repetitive Avalanche Current | EAR | 20.7 | mJ | (note 1) |
| Peak Diode Recovery dv/dt | dv/dt | 50 | V/ns | (note 3) |
| Power Dissipation (TC=25) | PD | 55.0 | W | |
| Power Dissipation -Derate above 25 | 0.31 | W/ | ||
| Operating and Storage Temperature Range | TJTSTG | -55+150 | ||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 |
| Parameter | Symbol | Min | Typ | Max | Unit | Tests conditions |
| Drain-Source Voltage | BVDSS | 600 | - | - | V | ID=250A, VGS=0V |
| Gate Threshold Voltage | VGS(th) | 3.0 | - | 5.0 | V | VDS = VGS , ID=250A |
| Static Drain-Source On-Resistance | RDS(ON) | 0.1 | 0.35 | 0.39 | VGS =10V , ID=10.0A | |
| Reverse transfer capacitance | Crss | 2.5 | 12.3 | 30 | pF | VDS=25V, VGS =0V, f=1.0MHZ |
| Total Gate Charge | Qg | 15 | 50 | 80 | nC | VDS =480V , ID=20A VGS =10Vnote 45 |
| Reverse recovery time | trr | 250 | 481 | 1200 | ns | VGS=0V, IS=20A dIF/dt=100A/s (note 4) |
| Reverse recovery charge | Qrr | 2.5 | 10.6 | 16 | C | VGS=0V, IS=20A dIF/dt=100A/s (note 4) |
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