N channel MOSFET Jilin Sino Microelectronics JCS9N90FT with TO 220MF Package and 9 Amp Drain Current
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Product Description
Product Overview
The JCS9N90T is an N-channel MOSFET designed for high-efficiency switching power supplies, electronic lamp ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speeds, and is 100% avalanche tested with improved dv/dt capability. This RoHS-compliant product is available in various packages and configurations.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rdson-Max (Vgs=10V) (Ω) | Qg (nC) |
| JCS9N90FT-F-B / JCS9N90FT-F-BR | N/A | TO-220MF | 9 | 900 | 1.35 | 43 |
| JCS9N90WT-GE-B / JCS9N90WT-GE-BR | N/A | TO-247 | 9 | 900 | 1.35 | 43 |
| JCS9N90ABT-GD-B / JCS9N90ABT-GD-BR | N/A | TO-3PB | 9 | 900 | 1.35 | 43 |
| JCS9N90BT-BP-B / JCS9N90BT-BP-BR | N/A | TO-262N | 9 | 900 | 1.35 | 43 |
| Parameter | Symbol | Value | Unit | Notes |
| Drain-Source Voltage | VDSS | 900 | V | |
| Continuous Drain Current | ID | 9 | A | T=25 |
| Continuous Drain Current | ID | 6.0* | A | T=100 |
| Pulse Drain Current | IDM | 36 | A | Note 1 |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Single Pulsed Avalanche Energy | EAS | 858 | mJ | Note 2 |
| Avalanche Current | IAR | 9 | A | Note 1 |
| Repetitive Avalanche Energy | EAR | 27.7 | mJ | Note 1 |
| Peak Diode Recovery dv/dt | dv/dt | 4.1 | V/ns | Note 3 |
| Power Dissipation | PD | 36 / 123.2 / 186.5 | W | TC=25 |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | ||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | ||
| Drain-Source Voltage | BVDSS | 900 | V | ID=250μA, VGS=0V |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=900V,VGS=0V, TC=25 |
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS=720V, TC=125 |
| Gate Threshold Voltage | VGS(th) | 3.0 - 5.0 | V | VDS = VGS , ID=250μA |
| Static Drain-Source On-Resistance | RDS(ON) | 1.18 - 1.35 | Ω | VGS =10V , ID=4.5A, 25 |
| Static Drain-Source On-Resistance | RDS(ON) | 2.07 - 2.50 | Ω | VGS =10V , ID=4.5A, 100 |
| Static Drain-Source On-Resistance | RDS(ON) | 3.07 - 3.60 | Ω | VGS =10V , ID=4.5A, 150 |
| Forward Transconductance | gfs | 9.5 | S | VDS = 40V, ID=4.5A (note 4) |
| Input capacitance | Ciss | 1200 - 2830 | pF | VDS=25V, VGS =0V, f=1.0MHZ |
| Output capacitance | Coss | 100 - 246 | pF | |
| Reverse transfer capacitance | Crss | 5 - 17 | pF | |
| Total Gate Charge | Qg | 43 - 56 | nC | VDS =720V , ID=9A, VGS =10V (note 4,5) |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 9 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 36 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS=0V, IS=9A |
| Reverse recovery time | trr | 539 - 1200 | ns | VGS=0V, IS=9A, dIF/dt=100A/μs (note 4) |
| Reverse recovery charge | Qrr | 6.41 - 15 | μC | |
| Thermal Resistance, Junction to Case | Rth(j-c) | 3.47 / 1.01 / 0.67 | /W | JCS9N90FT / JCS9N90BT / JCS9N90WT/ABT |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 / 50 / 40 | /W | JCS9N90FT / JCS9N90BT / JCS9N90WT/ABT |
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