Low gate charge MOSFET Jilin Sino Microelectronics JCS4N65RC DPAK for electronic ballast applications

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Product Description

Product Overview

The JCS4N65C is a high-performance N-channel MOSFET designed for demanding power applications. It offers low gate charge, fast switching speeds, and improved dv/dt capability, making it ideal for high-frequency switching power supplies, electronic ballasts, and LED power supplies. The product is 100% avalanche tested and RoHS compliant.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd.
Certifications: RoHS

Technical Specifications

Order Codes	Marking	Package	Halogen-Tube	Halogen-Free-Tube	Halogen-Reel	Halogen-Free-Reel	Main Characteristics (ID, VDSS, Rds(on), Qg)
JCS4N65VC-V-B	JCS4N65V	IPAK	✔	✔	N/A	N/A	ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6, Qg-typ: 14nC
JCS4N65RC-R-B	JCS4N65RC-R-AR	DPAK	✔	✔	✔	✔	ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6, Qg-typ: 14nC
JCS4N65CC-C-B	JCS4N65C	TO-220C	N/A	N/A	N/A	N/A	ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6, Qg-typ: 14nC
JCS4N65FC-F-B	JCS4N65F	TO-220MF	✔	✔	N/A	N/A	ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6, Qg-typ: 14nC
JCS4N65FC-F2-B	JCS4N65F	TO-220MF-K2	✔	✔	N/A	N/A	ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6, Qg-typ: 14nC
JCS4N65FC-F4-B	JCS4N65F	TO-220MF-K4	✔	✔	N/A	N/A	ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6, Qg-typ: 14nC
JCS4N65BC-B-B	JCS4N65B	TO-262	✔	✔	N/A	N/A	ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6, Qg-typ: 14nC
JCS4N65MC-M-B	JCS4N65M	TO-126-K1	✔	✔	N/A	N/A	ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6, Qg-typ: 14nC
JCS4N65MFC-MF-B	JCS4N65MF	TO-126F	✔	✔	N/A	N/A	ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6, Qg-typ: 14nC

Absolute Maximum Ratings

Parameter	Symbol	Value	Unit	Applicable Packages
Drain-Source Voltage	VDSS	650	V	All
Drain Current -continuous (T=25)	ID	4.0*	A	All
Drain Current -continuous (T=100)	ID	3.2	A	JCS4N65VC/RC/BC/MC/MFC
Drain Current -continuous (T=100)	ID	2.5*	A	JCS4N65CC
Drain Current -continuous (T=100)	ID	2.5*	A	JCS4N65FC
Drain Current -continuous (T=100)	ID	2.5*	A	JCS4N65FC-K2/K4
Drain Current - pulse (note 1)	IDM	16*	A	All
Gate-Source Voltage	VGSS	30	V	All
Single Pulsed Avalanche Energy (note 2)	EAS	256	mJ	All
Avalanche Current (note 1)	IAR	4.0	A	All
Repetitive Avalanche Current (note 1)	EAR	11.0	mJ	All
Peak Diode Recovery dv/dt (note 3)	dv/dt	5.5	V/ns	All
Power Dissipation (TC=25)	PD	122	W	JCS4N65VC/RC/BC/MC/MFC
Power Dissipation (TC=25)	PD	138	W	JCS4N65CC
Power Dissipation (TC=25)	PD	49.8	W	JCS4N65FC (TO-220MF)
Power Dissipation (TC=25)	PD	38.8	W	JCS4N65FC (TO-220MF-K2/K4)
Operating and Storage Temperature Range	TJTSTG	-55+150		All
Maximum Lead Temperature for Soldering Purposes	TL	300		All

Electrical Characteristics

Parameter	Symbol	Tests conditions	Min	Typ	Max	Unit
Drain-Source Voltage	BVDSS	ID=250A, VGS=0V	650	-	-	V
Breakdown Voltage Temperature Coefficient	BVDSS/ TJ	ID=250A, referenced to 25	-	0.65	-	V/
Zero Gate Voltage Drain Current	IDSS	VDS=650V,VGS=0V, TC=25	-	-	10	A
Zero Gate Voltage Drain Current	IDSS	VDS=520V, TC=125	-	-	100	A
Gate-body leakage current, forward	IGSSF	VDS=0V, VGS =30V	-	-	100	nA
Gate-body leakage current, reverse	IGSSR	VDS=0V, VGS =-30V	-	-	-100	nA
Gate Threshold Voltage	VGS(th)	VDS = VGS , ID=250A	2.0	-	4.0	V
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V , ID=2.0A, 25	-	2.1	2.6
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V , ID=2.0A, 100	-	3.68	4.2
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V , ID=2.0A, 150	-	5.46	6.2
Forward Transconductance	gfs	VDS = 40V , ID=2.0A (note 4)	-	4.5	-	S
Gate resistance	Rg	F=1.0MHZ open drain	0.8	-	5.5
Input capacitance	Ciss	VDS=25V, VGS =0V, f=1.0MHZ	200	490	810	pF
Output capacitance	Coss	VDS=25V, VGS =0V, f=1.0MHZ	-	20	100	pF
Reverse transfer capacitance	Crss	VDS=25V, VGS =0V, f=1.0MHZ	-	1	10	pF
Turn-On delay time	td(on)	VDD=325V,ID=4.0A,RG=25 (note 4,5)	-	49	100	ns
Turn-On rise time	tr	VDD=325V,ID=4.0A,RG=25 (note 4,5)	-	62	120	ns
Turn-Off delay time	td(off)	VDD=325V,ID=4.0A,RG=25 (note 4,5)	-	81	160	ns
Turn-Off Fall time	tf	VDD=325V,ID=4.0A,RG=25 (note 4,5)	-	21	50	ns
Total Gate Charge	Qg	VDS =520V , ID=4.0A VGS =10V (note 4,5)	-	14	22	nC
Gate-Source charge	Qgs	VDS =520V , ID=4.0A VGS =10V (note 4,5)	-	3	7.0	nC
Gate-Drain charge	Qgd	VDS =520V , ID=4.0A VGS =10V (note 4,5)	-	5	10.0	nC
Maximum Continuous Drain -Source Diode Forward Current	IS	-	-	-	4	A
Maximum Pulsed Drain-Source Diode Forward Current	ISM	-	-	-	16	A
Drain-Source Diode Forward Voltage	VSD	VGS=0V, IS=4.0A	-	-	1.4	V
Reverse recovery time	trr	VGS=0V, IS=4.0A dIF/dt=100A/s (note 4)	-	280	800	ns
Reverse recovery charge	Qrr	VGS=0V, IS=4.0A dIF/dt=100A/s (note 4)	-	2.0	6.8	C

Thermal Characteristics

Parameter	Symbol	Max	Unit	Applicable Packages
Thermal Resistance, Junction to Case	Rth(j-c)	1.02	/W	JCS4N65 VC/RC/BC/MC /MFC
Thermal Resistance, Junction to Case	Rth(j-c)	0.905	/W	JCS4N65 CC
Thermal Resistance, Junction to Case	Rth(j-c)	2.51	/W	JCS4N65FC (TO-220MF)
Thermal Resistance, Junction to Case	Rth(j-c)	3.22	/W	JCS4N65FC (TO-220MF-K2/K4)
Thermal Resistance, Junction to Ambient	Rth(j-A)	73.14	/W	JCS4N65 VC/RC/BC/MC /MFC
Thermal Resistance, Junction to Ambient	Rth(j-A)	59.3	/W	JCS4N65 CC
Thermal Resistance, Junction to Ambient	Rth(j-A)	41.3	/W	JCS4N65FC (TO-220MF)
Thermal Resistance, Junction to Ambient	Rth(j-A)	48.68	/W	JCS4N65FC (TO-220MF-K2/K4)