PNP transistor MMBT3906X with collector current of 200 milliamps and low maximum voltage of 40 volts
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Product Description
Product Overview
The MMBT3906X is a PNP general-purpose transistor featuring epitaxial planar die construction. It offers complementary NPN type availability (MMBT3904), a collector current capability of -200mA, and a low maximum voltage of -40V. This transistor is ideal for medium power amplification and switching applications.
Product Attributes
- Type No.: MMBT3906X
- Marking: 2A
- Package Code: SOT23
- Material: Pb Lead-free
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-base voltage | VCBO | open emitter | -40 | V |
| Collector-emitter voltage | VCEO | open base | -40 | V |
| Emitter-base voltage | VEBO | open collector | -5 | V |
| Collector current (DC) | IC | -200 | mA | |
| Total power dissipation | Ptot | Tamb25C | 200 | mW |
| Storage temperature | Tstg | -55 to +150 | C | |
| Junction temperature | Tj | 150 | C | |
| Collector cut-off current | ICBO | IE = 0; VCB = -40 V | -0.1 | uA |
| Emitter cut-off current | IEBO | IC = 0; VEB =- 5 V | -0.1 | uA |
| DC current gain | hFE | VCE = -1V; IC = -10mA | 100 | |
| DC current gain | hFE | VCE = -1V; IC = -50mA | 60 | |
| DC current gain | hFE | VCE = -1V; IC = -100mA | 30 | |
| DC current gain | hFE | VCE = -1V; IC = -10mA | 300 | |
| Collector-emitter saturation voltage | VCEsat | IC = -10mA; IB = -1mA | -200 | mV |
| Collector-emitter saturation voltage | VCEsat | IC = -50mA; IB = -5mA | -400 | mV |
| Base-emitter saturation voltage | VBEsat | IC = -10mA; IB = -1mA | -850 | mV |
| Base-emitter saturation voltage | VBEsat | IC = -50mA; IB = -5mA | -950 | mV |
| Transition frequency | fT | IC = -10mA; VCE = -20 V; f = 100MHz | 300 | MHz |
| Delay time | td | VCC = -3V; IC = -10mA; IB2= -1mA IB1= 2 | 35 | ns |
| Rise time | tr | VCC = -3V; IC = -10mA; IB2= -1mA IB1= 2 | 35 | ns |
| Storage time | ts | VCC = -3V; IC = -10mA; IB2= -1mA IB1= 2 | 225 | ns |
| Fall time | tr | VCC = -3V; IC = -10mA; IB2= -1mA IB1= 2 | 75 | ns |
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