dual transistor component JSCJ UMD12N-HAF featuring NPN and PNP transistors in compact SOT-363 package

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Product Description

Product Overview

The UMD12N is a dual digital transistor package containing both a DTC144E (NPN) and a DTA144E (PNP) chip. Designed for automatic mounting with SOT-363 machines, its independent transistor elements prevent interference. This integration offers significant cost and area savings for applications requiring both NPN and PNP digital transistors.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Marking: D12
Package: SOT-363

Technical Specifications

Parameter	Symbol	UMD12N (NPN) TR1	Unit	UMD12N (PNP) TR2	Unit	Conditions
Absolute Maximum Ratings
Supply voltage	VCC	50	V	-50	V
Input voltage	VIN	-10~+40	V	-40~+10	V
Output current	IO (MAX)	100	mA	-100	mA
Power dissipation	Pd	150	mW	150	mW
Operation Junction and Storage Temperature Range	TJ, Tstg	-55~+150		-55~+150
Electrical Characteristics
Input voltage (off)	VI(off)	0.5	V	-0.5	V	VCC=5V, IO=100A (TR1); VCC=-5V, IO=-100A (TR2)
Input voltage (on)	VI(on)	3	V	-3	V	VO=0.3V, IO=2mA (TR1); VO=-0.3V, IO=-2mA (TR2)
Output voltage (on)	VO(on)	0.1 ~ 0.3	V	-0.1 ~ -0.3	V	IO/II=10mA/0.5mA (TR1); IO/II=-10mA/-0.5mA (TR2)
Input current	II	0.18	mA	-0.18	mA	VI=5V (TR1); VI=-5V (TR2)
Output current (off)	IO(off)	0.5	A	-0.5	A	VCC=50V, VI=0 (TR1); VCC=-50V, VI=0 (TR2)
DC current gain	GI	68		68		VO=5V, IO=5mA (TR1); VO=-5V, IO=-5mA (TR2)
Input resistance	R1	32.9 ~ 61.1	K	32.9 ~ 61.1	K
Resistance ratio	R2/R1	0.8 ~ 1.2		0.8 ~ 1.2
Transition frequency	fT	250	MHz	250	MHz	VCE=10V, IE=-5mA, f=100MHz (TR1); VCE=-10V, IE=5mA, f=100MHz (TR2)