Silicon Planar Zener Diode Jingdao Microelectronics BZT52C6V2S with Wide Voltage Range and 200mW Power Dissipation
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Product Description
Product Overview
Silicon Planar Zener Diodes with a total power dissipation of up to 200mW and a wide zener reverse voltage range from 2.4V to 43V. These diodes are ideally suited for automated assembly processes.
Product Attributes
- Brand: Jingdao Microelectronics ()
- Origin: China
- Material: Silicon Planar
- Certifications: MIL-STD-750, Method 2026 (for solderability)
Technical Specifications
| Type | Zener Voltage Range (VZT @ IZT) Nom (V) | Zener Voltage Range (VZT @ IZT) Min (V) | Zener Voltage Range (VZT @ IZT) Max (V) | Maximum Zener Impedance (ZZT @ IZT) () | Maximum Current (IZK @ VZK) (mA) | Typical Temperature Coefficient @IZTC (mV/) | Reverse Current (IR @ VR) (A) |
| BZT52C2V4S | 2.4 | 2.2 | 2.5 | 100 | 1 | -3.5 | 100 |
| BZT52C2V7S | 2.7 | 2.5 | 2.9 | 100 | 1 | -3.5 | 100 |
| BZT52C3V0S | 3 | 2.8 | 3.2 | 95 | 1 | -3.5 | 95 |
| BZT52C3V3S | 3.3 | 3.1 | 3.5 | 95 | 1 | -3.5 | 95 |
| BZT52C3V6S | 3.6 | 3.4 | 3.8 | 90 | 1 | -3.5 | 90 |
| BZT52C3V9S | 3.9 | 3.7 | 4.1 | 90 | 1 | -3.5 | 90 |
| BZT52C4V3S | 4.3 | 4 | 4.6 | 90 | 1 | -3.5 | 90 |
| BZT52C4V7S | 4.7 | 4.4 | 5 | 80 | 2 | -3.5 | 80 |
| BZT52C5V1S | 5.1 | 4.8 | 5.4 | 60 | 2 | -2.7 | 60 |
| BZT52C5V6S | 5.6 | 5.2 | 6 | 40 | 2 | -2 | 40 |
| BZT52C6V2S | 6.2 | 5.8 | 6.6 | 10 | 4 | 0.4 | 10 |
| BZT52C6V8S | 6.8 | 6.4 | 7.2 | 15 | 4 | 1.2 | 5 |
| BZT52C7V5S | 7.5 | 7 | 7.9 | 15 | 5 | 2.5 | 5 |
| BZT52C8V2S | 8.2 | 7.7 | 8.7 | 15 | 5 | 3.7 | 5 |
| BZT52C9V1S | 9.1 | 8.5 | 9.6 | 15 | 5 | 4.5 | 5 |
| BZT52C10S | 10 | 9.4 | 10.6 | 20 | 5 | 5.3 | 5 |
| BZT52C11S | 11 | 10.4 | 11.6 | 20 | 5 | 6.2 | 5 |
| BZT52C12S | 12 | 11.4 | 12.7 | 25 | 5 | 7 | 5 |
| BZT52C13S | 13 | 12.4 | 14.1 | 30 | 5 | 8 | 5 |
| BZT52C15S | 15 | 13.8 | 15.6 | 30 | 5 | 9 | 5 |
| BZT52C16S | 16 | 15.3 | 17.1 | 40 | 5 | 10 | 5 |
| BZT52C18S | 18 | 16.8 | 19.1 | 45 | 5 | 11 | 5 |
| BZT52C20S | 20 | 18.8 | 21.2 | 55 | 5 | 13 | 5 |
| BZT52C22S | 22 | 20.8 | 23.3 | 55 | 5 | 14 | 5 |
| BZT52C24S | 24 | 22.8 | 25.6 | 70 | 2 | 16 | 2 |
| BZT52C27S | 27 | 25.1 | 28.9 | 80 | 2 | 18 | 2 |
| BZT52C30S | 30 | 28 | 32 | 80 | 2 | 20 | 2 |
| BZT52C33S | 33 | 31 | 35 | 80 | 2 | 22 | 2 |
| BZT52C36S | 36 | 34 | 38 | 90 | 2 | 25.3 | 2 |
| BZT52C39S | 39 | 37 | 41 | 130 | 5 | 29.4 | 5 |
| BZT52C43S | 43 | 40 | 46 | 100 | 5 | 33.4 | 5 |
Additional Technical Data
| Parameter | Symbol | Value | Unit |
| Total power dissipation | PD | 200 | mW |
| Operating and Storage Temperature Range | Tj, Tstg | -55 ~ +150 | C |
| Forward Voltage at IF = 10 mA | VF | 0.9 | V |
| Typical thermal resistance junction to ambient | RJA | 625 | C/W |
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