Low RDSon surface mount MOSFET JingYang AO3400 ideal for power management and battery life extension
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Product Description
Product Overview
These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. The low thermal impedance copper leadframe SOT23 saves board space, while lower gate charge and fast switching speed are achieved through high performance trench technology. This N-Channel 30-V (D-S) MOSFET is designed for applications requiring high efficiency and extended battery life.
Product Attributes
- Brand: AO3400
- Origin: www.jy-electronics.com.cn
- Package: SOT23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25oC | 5.8 | A | ||
| Continuous Drain Current | ID | TA=70oC | 4.9 | A | ||
| Pulsed Drain Current | IDM | 30 | A | |||
| Continuous Source Current (Body Diode) | IS | 2.5 | A | |||
| Power Dissipation | PD | TA=25oC | 350 | mW | ||
| Operation Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | OC | ||
| Maximum Junction-to-Ambient | RJA | 357 | °C/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = 250uA | 0.7 | 1.4 | V | |
| Gate-Body Leakage | IGSS | VDS = 0 V, VGS =±12V | ±100 | nA | ||
| Drain-Source Leakage Current | IDSS | VDS = 24 V, VGS = 0 V, TJ = 25oC | 1 | uA | ||
| Drain-Source Leakage Current | IDSS | VDS = 24 V, VGS = 0 V, TJ = 55oC | 5 | uA | ||
| Drain-Source On-Resistance | RDS(on) | VGS = 10 V, ID = 5.8 A | 41 | mΩ | ||
| Drain-Source On-Resistance | RDS(on) | VGS = 4.5 V, ID = 5.0 A | 45 | mΩ | ||
| Drain-Source On-Resistance | RDS(on) | VGS = 2.5 V, ID = 4.0A | 59 | mΩ | ||
| Forward Transconductance | gfs | VDS = 5V, ID = 5A | 15 | S | ||
| Diode Forward On Voltage | VSD | IS = 1.0 A, VGS = 0 V | 1.0 | V | ||
| Reverse Recovery Time | Trr | IS =5A,VGS=0V, di/dt=100A/uS | 16 | nS | ||
| Reverse Recovery Charge | Qrr | 8.9 | nC | |||
| Total Gate Charge | Qg | VDS = 15V, VGS = 4.5V ID = 5.8A | 9.7 | 12 | nC | |
| Gate-Source Charge | Qgs | 1.6 | nC | |||
| Gate-Drain Charge | Qgd | 3.1 | nC | |||
| Turn-On Delay Time | td(on) | VDS=15V, RL=2.7Ω,RG = 3Ω, VGS = 10V | 3.3 | nS | ||
| Turn-On Rise Time | tr | 4.8 | nS | |||
| Turn-Off Delay Time | td(off) | 26.3 | nS | |||
| Turn-Off Fall Time | tf | 4.1 | nS | |||
| Input Capacitance | Ciss | VGS=0V,VDS=-15V,f =1.0MHz | 823 | 1030 | pF | |
| Output Capacitance | Coss | 99 | pF | |||
| Reverse Transfer Capacitance | Crss | 77 | pF | |||
| Gate Resistance | Rg | f =1.0MHz | 1.2 | 3.6 | Ω | |
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