Small Signal NPN Transistor JKSEMI MMBT5551 SOT23 Package Suitable for General Purpose Applications

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The MMBT5551 is an NPN transistor in a SOT-23 plastic-encapsulate package. It offers a power dissipation of 300mW, high stability, and high reliability. This transistor is complementary to the MMBT5401 and is suitable for general-purpose applications requiring a small outline plastic package.

Product Attributes

Brand: jksemi
Package: SOT-23 Plastic-Encapsulate
Marking: G1
Certifications: UL Epoxy UL: 94V-0
Mounting Position: Any

Technical Specifications

Parameter	Symbol	Test Condition	Min	Max	Unit
Maximum Ratings & Thermal Characteristics
Collector-Base Voltage	VCBO			180	V
Collector-Emitter Voltage	VCEO			160	V
Emitter-Base Voltage	VEBO			6	V
Collector Current-Continuous	IC			600	mA
Collector Power Dissipation	PC			300	mW
Junction Temperature	Tj			150
Storage Temperature	Tstg		-55	+150
Thermal resistance From junction to ambient	RJA			416	/W
Electrical Characteristics
Collector-base breakdown voltage	V(BR)CBO	IC=100uA, IE=0	180		V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0	160		V
Emitter-base breakdown voltage	V(BR)EBO	IE=10uA, IC=0	6		V
Collector cut-off current	ICBO	VCB=120V, IE=0		50	nA
Emitter cut-off current	IEBO	VEB=4V, IC=0		50	nA
DC current gain	hFE(1)	VCE=5V, IC=1mA	80
	hFE(2)	VCE=5V, IC=10mA	100	300
	hFE(3)	VCE=5V, IC=50mA	30
Collector-emitter saturation voltage	VCE(sat)1	IC=10mA, IB=1mA		0.15	V
Collector-emitter saturation voltage	VCE(sat)2	IC=50mA, IB=5mA		0.20	V
Base -emitter saturation voltage	VBE(sat)1	IC=10mA, IB=1mA		1.00	V
Base -emitter saturation voltage	VBE(sat)2	IC=50mA, IB=5mA		1.00	V
Transition frequency	fT	VCE=10V, IC=10mA,f=100MHz	100	300	MHz
Collector output capacitance	Cob	VCB=10V, IE=0, f=1MHz		6	pF
CLASSIFICATION OF hFE(2)
HFE RANK	L	H
RANGE	100-200	200-300