High speed switching MOSFET Jingdao Microelectronics F5N65 designed for power supply and adaptor applications
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Product Description
Product Overview
The F5N65 is a high voltage N-CHANNEL POWER MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is typically used in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin:
- Case: ITO-220ABW
- Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 650 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 5 | A | Tc=25°C |
| Continuous Drain Current | ID | 3.5 | A | Tc=100°C |
| Pulsed Drain Current (Note 2) | IDM | 210 | A | |
| Power Dissipation | PD | 43 | W | Tc=25°C |
| Power Dissipation | PD | 20 | W | Tc=100°C |
| Single Pulsed Avalanche Energy (Note 3) | EAS | 210 | mJ | |
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 2.1 | V/ns | |
| Junction to Ambient Thermal Resistance | RthJA | 63 | °C/W | |
| Junction to Case Thermal Resistance | RthJC | 2.9 | °C/W | |
| Operation Junction Temperature and Storage Temperature | Tj, stg | -55 ~ +150 | °C | |
| OFF CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V,ID=0.25mA |
| Gate-Source Leakage Current | IGSS | ±100 | nA | VDS=0V,VGS=±30V |
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=650V,VGS=0V |
| ON CHARACTERISTICS | ||||
| Static Drain-Source On-State Resistance | RDS(ON) | 2.1 | Ω | VGS=10V,ID=2.5A |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250µA |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | CISS | 870 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 104 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 13 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Total Gate Charge (Note 1) | QG | 36 | nC | VDS=520V,VGS=10V, ID=5A |
| Gate-Drain Charge | QGD | 16 | nC | VDS=520V,VGS=10V, ID=5A |
| Gate-Source Charge | QGS | 10 | nC | VDS=520V,VGS=10V, ID=5A |
| SWITCHING CHARACTERISTICS | ||||
| Turn-On Delay Time (Note 1) | tD(ON) | 14 | ns | VDS=100V,VGS=10V, ID=5A,RG=25Ω |
| Turn-On Rise Time | tR | 8 | ns | VDS=100V,VGS=10V, ID=5A,RG=25Ω |
| Turn-Off Delay Time | tD(OFF) | 180 | ns | VDS=100V,VGS=10V, ID=5A,RG=25Ω |
| Turn-Off Fall Time | tF | 4.5 | ns | VDS=100V,VGS=10V, ID=5A,RG=25Ω |
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | ||||
| Maximum Body-Diode Continuous Current | IS | 5 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 20 | A | |
| Drain-Source Diode Forward Voltage (Note 1) | VSD | 1.4 | V | IS=5A,VGS=0V |
| Reverse Recovery Time (Note 1) | trr | 180 | ns | IS=5A,VGS=0V, di/dt=100A/us |
| Reverse Recovery Charge (Note 1) | Qrr | 4.5 | µC | IS=5A,VGS=0V, di/dt=100A/us |
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 2.1 | V/ns | |
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Sellina