NPN switching transistor JingYang MMBT3904FX with epitaxial planar die construction and 200 milliamp collector current
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Product Description
Product Overview
The MMBT3904FX is an NPN switching transistor featuring epitaxial planar die construction. It offers a collector current capability of 200mA and a collector-emitter voltage of 40V. This device is suitable for general switching and amplification applications and is available in a SOT-523 package. A complementary PNP type, MMBT3906, is also available.
Product Attributes
- Brand: JY Electronics (implied by website)
- Origin: China (implied by website)
- Certifications: Pb Lead-free
Technical Specifications
| Symbol | Parameter | Conditions | Value | Unit |
| VCBO | Collector-base voltage | Open emitter | 60 | V |
| VCEO | Collector-emitter voltage | Open base | 40 | V |
| VEBO | Emitter-base voltage | Open collector | 6 | V |
| IC | Collector current (DC) | 200 | mA | |
| Ptot | Total power dissipation | Tamb25C | 200 | mW |
| Tstg | Storage temperature | -55 to +150 | C | |
| Tj | Junction temperature | 150 | C | |
| Tamb | Operating ambient temperature | -55 to +150 | C | |
| ICBO | Collector cut-off current | IE = 0; VCB = 60 V | - 0.1 | uA |
| IEBO | Emitter cut-off current | IC = 0; VEB = 5 V | - 0.1 | uA |
| hFE | DC current gain | VCE = 1 V; IC = 10mA | 100 - 300 | - |
| VCE = 1 V; IC = 50mA | 60 - | - | ||
| VCE = 1 V; IC = 100mA | 30 - | - | ||
| VCEsat | Collector-emitter saturation voltage | IC = 10mA; IB = 1mA | - 200 | mV |
| IC = 50mA; IB = 5mA | - 300 | mV | ||
| VBEsat | Base-emitter saturation voltage | IC = 10mA; IB = 1mA | 650 - 850 | mV |
| IC = 50mA; IB = 5mA | - 950 | mV | ||
| fT | Transition frequency | IC =10mA; VCE =20V; f =100MHz | 300 - | MHz |
| Switching times | td (delay time) | VCC=3Vdc, VBE=0.5Vdc | - 35 | ns |
| tr (rise time) | IC=10mAdc, IB1=1mAdc | - 35 | ns | |
| ts (storage time) | VCC=3Vdc, IC=10mAdc | - 200 | ns | |
| tf (fall time) | IB1=IB2=1mAdc | - 50 | ns |
Note: Pulse test: tp300 ms; d0.02.
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