Electronic component JingYang MMBT5551 NPN transistor for medium power amplification and switching

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Product Description

MMBT5551 NPN Transistor

The MMBT5551 is an NPN transistor designed as a complementary part to the MMBT5401. It is ideal for medium power amplification and switching applications.

Product Attributes

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Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Breakdown Voltage	V(BR)CBO	IC=100A, IE=0	180			V
	V(BR)CEO	IC=1mA, IB=0	160			V
	V(BR)EBO	IE=10A, IC=0	6			V
Cut-off Current	ICBO	VCB=120V, IE=0			50	nA
Cut-off Current	IEBO	VEB=4V, IC=0			50	nA
DC Current Gain	hFE(1)	VCE=5V, IC=1mA	80
	hFE(2)	VCE=5V, IC=10mA	100	300
	hFE(3)	VCE=5V, IC=50mA	50
Collector-Emitter Saturation Voltage	VCE(sat)1	IC=10mA, IB=1mA		0.15		V
Collector-Emitter Saturation Voltage	VCE(sat)2	IC=50mA, IB=5mA		0.2		V
Base-Emitter Saturation Voltage	VBE(sat)1	IC=10mA, IB=1mA		1		V
Base-Emitter Saturation Voltage	VBE(sat)2	IC=50mA, IB=5mA		1		V
Transition Frequency	fT	VCE=10V,IC=10mA, f=100MHz	100	300		MHz
Collector Output Capacitance	Cob	VCB=10V, IE=0, f=1MHz		6		pF

Maximum Ratings

Parameter	Symbol	Value	Unit	Conditions
Collector-Base Voltage	VCBO	180	V	Ta=25 unless otherwise noted
Collector-Emitter Voltage	VCEO	160	V	Ta=25 unless otherwise noted
Emitter-Base Voltage	VEBO	6	V	Ta=25 unless otherwise noted
Collector Current	IC	600	mA	Ta=25 unless otherwise noted
Collector Power Dissipation	PC	300	mW	Ta=25 unless otherwise noted
Thermal Resistance Junction To Ambient	RJA	416	/W	Ta=25 unless otherwise noted
Operation Junction and Storage Temperature Range	TJ,Tstg	-55+150		Ta=25 unless otherwise noted