TO92 Package NPN Transistor JingYang 2N3904X Suitable for Switching and Amplifier Electronic Circuits

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

NPN Silicon Epitaxial Planar Transistor designed for switching and amplifier applications. Complementary PNP types include 2N3905 and 2N3906. Custom pin configurations are available upon request.

Product Attributes

Brand: JY Electronics
Package: TO-92 Plastic
Origin: China (implied by URL)

Technical Specifications

Parameter	Symbol	2N3903X Min.	2N3903X Max.	2N3904X Min.	2N3904X Max.	Unit
Absolute Maximum Ratings
Collector Base Voltage	VCBO				60	V
Collector Emitter Voltage	VCEO				40	V
Emitter Base Voltage	VEBO				6	V
Collector Current	IC				200	mA
Power Dissipation	Ptot				625	mW
Junction Temperature	Tj				150	OC
Storage Temperature Range	Tstg	-55			+150	OC
Characteristics (Ta = 25 OC)
DC Current Gain (VCE = 1 V, IC = 0.1 mA)	hFE	20		40
DC Current Gain (VCE = 1 V, IC = 1 mA)	hFE	35		70
DC Current Gain (VCE = 1 V, IC = 10 mA)	hFE	50		100
DC Current Gain (VCE = 1 V, IC = 50 mA)	hFE	30		60
DC Current Gain (VCE = 1 V, IC = 100 mA)	hFE	15		30
Collector Base Cutoff Current (VCB = 30 V)	ICBO		50		50	nA
Emitter Base Cutoff Current (VEB = 6 V)	IEBO		50		50	nA
Collector Base Breakdown Voltage (IC = 10 A)	V(BR)CBO	60		60		V
Collector Emitter Breakdown Voltage (IC = 1 mA)	V(BR)CEO	40		40		V
Emitter Base Breakdown Voltage (IE = 10 A)	V(BR)EBO	6		6		V
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 1 mA)	VCE(sat)		0.2		0.2	V
Collector Emitter Saturation Voltage (IC = 50 mA, IB = 5 mA)	VCE(sat)		0.3		0.3	V
Base Emitter Saturation Voltage (IC = 10 mA, IB = 1 mA)	VBE(sat)		0.85		0.85	V
Base Emitter Saturation Voltage (IC = 50 mA, IB = 5 mA)	VBE(sat)		0.95		0.95	V
Gain Bandwidth Product (VCE = 20 V, IC = 10 mA, f = 100 MHz)	fT	250		300		MHz
Collector Base Capacitance (VCB = 5 V, f = 100 KHz)	Cob		4		4	pF
Delay Time (VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA)	td		35		35	ns
Rise Time (VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA)	tr		35		35	ns
Storage Time (VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA)	ts		200		200	ns
Fall Time (VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA)	tf		50		50	ns