Dual digital transistors JSCJ EMD9 with built in resistors designed to enhance performance in digital electronics

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Product Description

EMD9 Dual Digital Transistors

The EMD9 is a dual digital transistor package containing two DTA114Y and DTC114Y transistors. This integrated component offers the convenience of built-in resistors, simplifying circuit design and reducing component count. It is suitable for various digital applications where space and component efficiency are critical.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Marking: D9
Package: SOT-563
Type: Dual Digital Transistors (NPN+PNP)
Resistor Configuration: Built-in Resistors (R1, R2)

Technical Specifications

Parameter	Symbol	NPN (DTA114Y) Min	NPN (DTA114Y) Typ	NPN (DTA114Y) Max	NPN (DTA114Y) Unit	NPN (DTA114Y) Conditions	PNP (DTC114Y) Min	PNP (DTC114Y) Typ	PNP (DTC114Y) Max	PNP (DTC114Y) Unit	PNP (DTC114Y) Conditions
Supply voltage	VCC			50	V	Ta=25			-50	V	Ta=25
Input voltage	VIN			+40	V	Ta=25			-40	V	Ta=25
Output current	IC(MAX)			100	mA	Ta=25			-100	mA	Ta=25
Power dissipation	Pd			150	mW	Ta=25			150	mW	Ta=25
Operation Junction and Storage Temperature Range	TJ,Tstg	-55		150			-55		150
Input voltage (off)	VI(off)	0.3			V	VCC=5V ,IO=100A	-0.3			V	VCC=-5V ,IO=-100A
Input voltage (on)	VI(on)	1.4			V	VO=0.3V ,IO=1mA	-1.4			V	VO=-0.3V ,IO=-1mA
Output voltage (on)	VO(on)	0.1	0.3		V	IO=5mA, II=0.25mA	-0.1	-0.3		V	IO=-5mA,II=-0.25mA
Input current	II		0.88		mA	VI=5V		-0.88		mA	VI=-5V
Output current (off)	IO(off)		0.5		A	VCC=50V, VI=0		-0.5		A	VCC=-50V, VI=0
DC current gain	GI		68			VO=5V ,IO=5mA		68			VO=-5V ,IO=-5mA
Input resistance	R1	7	10	13	K		7	10	13	K
Resistance ratio	R2/R1	3.7	4.7	5.7			3.7	4.7	5.7
Transition frequency	fT		250		MHz	VO=10V ,IO=5mA,f=100MHz		250		MHz	VO=-10V ,IO=-5mA,f=100MHz