silicon epitaxial planar transistor JKSEMI MMBT3904 NPN type with operation in general applications

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Product Description

Product Overview

Silicon Epitaxial Planar Transistor (NPN) in SOT-23 package. Features high collector current, complementary to MMBT3906, and excellent HFE linearity. Suitable for general purpose applications.

Product Attributes

Brand: jksemi
Type: MMBT3904
Marking: 1AM
Origin: Not specified
Material: Silicon
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Test Condition	Min	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC=10uA, IE=0	60		V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0	40		V
Emitter-base breakdown voltage	V(BR)EBO	IE=10uA, IC=0	6		V
Collector cut-off current	ICEX	VCE=30V, VEB(off)=3V		50	nA
Collector cut-off current	ICBO	VCB=60V, IE=0		100	nA
Emitter cut-off current	IEBO	VEB=5V, IC=0		100	nA
DC current gain	hFE(1)	VCE=1V, IC=10mA	100	300
	hFE(2)	VCE=1V, IC=50mA	60
	hFE(3)	VCE=1V, IC=100mA	30
Collector-emitter saturation voltage	VCE(sat)	IC=50mA, IB=5mA		0.30	V
Base-emitter saturation voltage	VBE(sat)	IC=50mA, IB=5mA		0.95	V
Transition frequency	f T	VCE=20V, IC=10mA,f=100MHz	300		MHz
Delay time	td	VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA		35	nS
Rise time	tr	VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA		35	nS
Storage time	ts	VCC=3V, IC=10mA, IB1=IB2=1mA		200	nS
Fall time	tf	VCC=3V, IC=10mA, IB1=IB2=1mA		50	nS

Absolute Maximum Ratings

Symbol	Parameter	Value	Units
V CBO	Collector-Base Voltage	60	V
V CEO	Collector-Emitter Voltage	40	V
V EBO	Emitter-Base Voltage	6	V
I C	Collector Current -Continuous	200	mA
P C	Collector Dissipation	200	mW
Tj,T stg	Junction and Storage Temperature	-55~150