dual digital transistor JSCJ UMH3N with two independent NPN transistor elements and built in resistors
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Delivery Time:
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Product Description
Product Overview
The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD UMH3N is a dual digital transistor package containing two independent DTC143T NPN transistor elements. This configuration eliminates interference between elements, significantly reducing mounting cost and area by half. It is designed for applications requiring integrated digital transistor functionality with built-in resistors.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package Type: SOT-363
- Marking: H3
Technical Specifications
| Parameter | Symbol | Value | Units | Conditions |
| Collector-base voltage | V(BR)CBO | 50 | V | |
| Collector-emitter voltage | V(BR)CEO | 50 | V | |
| Emitter-base voltage | V(BR)EBO | 5 | V | |
| Collector current | IC | 100 | mA | |
| Collector Power dissipation | PC | 150 | mW | Ta=25 |
| Junction temperature | Tj | 150 | ||
| Storage temperature | Tstg | -55~150 | ||
| Collector-base breakdown voltage | V(BR)CBO | 50 | V | Ic=50A |
| Collector-emitter breakdown voltage | V(BR)CEO | 50 | V | Ic=1mA |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=50A |
| Collector cut-off current | ICBO | 0.5 | A | VCB=50V |
| Emitter cut-off current | IEBO | 0.5 | A | VEB=4V |
| Collector-emitter saturation voltage | VCE(sat) | 0.3 | V | IC=5mA,IB=0.25mA |
| DC current transfer ratio | hFE | 100-600 | VCE=5V,IC=1mA | |
| Input resistance | R1 | 3.29-6.11 | K | |
| Transition frequency | fT | 250 | MHz | VCE=10V ,IE=-5mA,f=100MHz |
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