Power switch dual digital transistors with integrated resistors JSCJ UMC3N series package type SOT353
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Product Description
Product Overview
The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD UMC3N is a series of dual digital transistors (NPN+PNP) featuring built-in resistors. These transistors are ideal for power switch circuits, offering reduced mounting cost and area by integrating two transistors into a single package. Available models include the DTC114E (NPN) and DTA114E (PNP).
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package Type: SOT-353
- Series: UMC3N
- Type: Dual Digital Transistors (NPN+PNP)
Technical Specifications
| Model | Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| DTC114E (NPN) | Input voltage (off) | VI(off) | 0.5 | V | VCC=5V ,IO=100A | ||
| Input voltage (on) | VI(on) | 3 | V | VO=0.3V ,IO=10mA | |||
| Output voltage (on) | VO(on) | 0.3 | V | IO/II=10mA/0.5mA | |||
| Input current | II | 0.88 | mA | VI=5V | |||
| Output current (off) | IO(off) | 0.5 | A | VCC=50V, VI=0 | |||
| DC current gain | GI | 30 | VO=5V,IO=5mA | ||||
| Input resistance | R1 | 7 | 10 | 13 | k | ||
| Resistance ratio | R2/R1 | 0.8 | 1 | 1.2 | |||
| Transition frequency | fT | 250 | MHz | VCE=10V ,IE=-5mA,f=100MHz | |||
| Supply voltage | VCC | 50 | V | ||||
| DTA114E (PNP) | Input voltage (off) | VI(off) | -0.5 | V | VCC=-5V ,IO=-100A | ||
| Input voltage (on) | VI(on) | -3 | V | VO=-0.3V ,IO=-10mA | |||
| Output voltage (on) | VO(on) | -0.3 | V | IO/II=-10mA/-0.5mA | |||
| Input current | II | -0.88 | mA | VI=-5V | |||
| Output current (off) | IO(off) | -0.5 | A | VCC=-50V, VI=0 | |||
| DC current gain | GI | 30 | VO=-5V,IO=-5mA | ||||
| Input resistance | R1 | 7 | 10 | 13 | k | ||
| Resistance ratio | R2/R1 | 0.8 | 1 | 1.2 | |||
| Transition frequency | fT | 250 | MHz | VCE=-10V ,IE=5mA,f=100MHz | |||
| Supply voltage | VCC | -50 | V | ||||
| General Ratings | Input voltage | VIN | -10~+40 | V | |||
| Output current | IO / ICM | 50 / 100 | mA | ||||
| Power dissipation | PD | 150 | mW | ||||
| Junction temperature | Tj | 150 | |||||
| Storage temperature | Tstg | -55 | ~ | 150 |
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