Durable electronic component JSCJ UML2N with transistor and diode housed in compact SOT353 package

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Product Description

Product Overview

The UML2N features the 2SC2412K transistor and diodes housed independently in a SOT-353 package. This product is designed for various electronic applications requiring reliable transistor and diode functionality.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
Origin: China
Package Type: SOT-353

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Units
UML2N Features
Collector-Base Voltage	VCBO				60	V
Collector-Emitter Voltage	VCEO				50	V
Emitter-Base Voltage	VEBO				6	V
Collector Current - Continuous	IC				150	mA
Collector Power Dissipation	PC	Ta=25			150	mW
Operation Junction and Storage Temperature Range	TJ,Tstg		-55		+150
Single Diode (DIO)
DC reverse voltage	VR	@Ta=25			80	V
Peak Reverse Voltage	VRM	@Ta=25			80	V
Forward Continuous Current	IFM	@Ta=25			300	mA
Average Rectified Output Current	IO	@Ta=25			100	mA
Surge current	ISURGE	@Ta=25			4	A
Operation Junction and Storage Temperature Range	TJ,TSTG	@Ta=25	-55		+150
Electrical Characteristics (Transistor)
Collector-base breakdown voltage	V(BR)CBO	IC=50A,IE=0	60			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA,IB=0	50			V
Emitter-base breakdown voltage	V(BR)EBO	IE=50A,IC=0	6			V
Collector cut-off current	ICBO	VCB=60V,IE=0			0.1	A
Emitter cut-off current	IEBO	VEB=5V,IC=0			0.1	A
DC current gain	hFE	VCE=6V,IC=1mA	120		560
Collector-emitter saturation voltage	VCE(sat)	IC=50mA,IB=5mA			0.4	V
Transition frequency	fT	VCE=12V,IC=2mA,f=100MHz		180		MHz
Collector output capacitance	Cob	VCB=12V,IE=0,f=1MHz			3.5	pF
Electrical Ratings (Diode)
Forward voltage	VF	IF=100mA			1.2	V
Reverse current	IR	VR=70V			0.1	A
Capacitance between terminals	CT	VR=6V,f=1MHz			3.5	pF
Reverse Recovery Time	trr	VR=6V, IF=5mA,RL=50			4	ns