SOD123 plastic encapsulated diode JSCJ 1N4448W designed for rapid reverse recovery and low capacitance

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Product Description

Product Overview

The 1N4448W is a fast switching diode from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for efficient switching applications. Encased in a SOD-123 plastic package, this diode offers high performance with features like rapid reverse recovery time and low capacitance, making it suitable for various electronic circuits requiring quick signal processing.

Product Attributes

Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Product Type: SOD-123 Plastic-Encapsulate Diodes
Marking: T5
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Limit	Unit	Conditions
Non-Repetitive Peak Reverse Voltage	VRM	100	V	@Ta=25
Peak Repetitive Peak Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage	VRRM / VRWM / VR	75	V	@Ta=25
RMS Reverse Voltage	VR(RMS)	53	V	@Ta=25
Forward Continuous Current	IFM	500	mA	@Ta=25
Average Rectified Output Current	IO	250	mA	@Ta=25
Peak Forward Surge Current (@t=1.0s)	IFSM	4.0	A	@Ta=25
Peak Forward Surge Current (@t =1.0s)	IFSM	1.5	A	@Ta=25
Power Dissipation	Pd	500	mW	@Ta=25
Thermal Resistance Junction to Ambient	RJA	250	/W	@Ta=25
Storage Temperature and Junction Temperature	TSTG/Tj	-55~+150		@Ta=25
Reverse Breakdown Voltage	V (BR)R	75	V	IR=10A
Forward Voltage (VF1)	VF1	0.62 - 0.72	V	IF=5mA
Forward Voltage (VF2)	VF2	0.855	V	IF=10mA
Forward Voltage (VF3)	VF3	1.0	V	IF=100mA
Forward Voltage (VF4)	VF4	1.25	V	IF=150mA
Reverse Current (IR1)	IR1	2.5	A	VR=75V
Reverse Current (IR2)	IR2	25	nA	VR=20V
Capacitance Between Terminals	CT	4	pF	VR=0V,f=1MHz
Reverse Recovery Time	trr	4	ns	IF=IR=10mA, Irr=0.1XIR,RL=100