N Channel Power MOSFET JSCJ CJT04N15 with Trench Technology and Plastic Encapsulated SOT 223 Package
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Product Description
Product Overview
The CJT04N15 is an N-Channel Power MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Its high-density cell design offers ultra-low RDS(ON), and it is fully characterized for avalanche voltage and current. The SOT-223 package provides good heat dissipation, making it suitable for a wide variety of applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD (CJT)
- Package Type: SOT-223
- Material: Plastic-Encapsulate
- Device Code: T04N15
- Code: 151
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 150 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 4 | A | |||
| Pulsed Drain Current (note1) | IDM | 16 | A | |||
| Thermal Resistance Junction to Ambient | RJA | 125 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds | TL | 260 | ||||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 150 | V | ||
| Drain-source diode forward voltage(note2) | VSD | VGS = 0V, IS =2.0A | 1.2 | V | ||
| Zero gate voltage drain current | IDSS | VDS =150V, VGS =0V | 1 | A | ||
| Gate-body leakage current (note2) | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics (note2) | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.5 | 2.0 | 2.5 | V |
| Static drain-source on-resistance | RDS(on) | VGS =10V, ID =4.0A | 130 | 160 | m | |
| Forward transconductance | gfs | VDS =15V, ID =4A | 5 | S | ||
| Dynamic Characteristics (note 3) | ||||||
| Input capacitance | Ciss | VDS =25V,VGS =0V,f =1MHz | 900 | pF | ||
| Output capacitance | Coss | 115 | ||||
| Reverse transfer capacitance | Crss | 70 | ||||
| Switching Characteristics (note 3) | ||||||
| Total gate charge | Qg | VDS =75V,VGS =10V,ID =1.5A | 19 | nC | ||
| Gate-source charge | Qgs | 5.5 | ||||
| Gate-drain charge | Qg d | 7 | ||||
| Turn-on delay time (note3) | td(on) | VDS=75V, VGS=10V, RG=6, ID =1.0A,RL=75 | 8 | ns | ||
| Turn-on rise time (note3) | tr | 10 | ||||
| Turn-off delay time (note3) | td(off) | 20 | ||||
| Turn-off fall time (note3) | tf | 15 | ||||
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