PNP Power Transistor Featuring Integrated NMOSFET JSCJ CJMNT32 for Portable Equipment Power Management
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Product Description
Product Overview
The JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD WBHFBP-06L-F is a Power Management Transistor featuring a PNP Power Transistor with an integrated N-MOSFET. It offers ultra-low collector-to-emitter saturation voltage and high DC current gain, packaged in a small form factor. This device is ideal for charging circuits and other power management applications in portable equipment.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: WBHFBP-06L-F
- Type: PNP Power Transistor with N-MOSFET
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| PNP Transistor | ||||||
| Collector-Base Voltage | VCBO | -32 | V | |||
| Collector-Emitter Voltage | VCEO | -32 | V | |||
| Emitter-Base Voltage | VEBO | -6 | V | |||
| Collector Current-Continuous | IC | (Note1) | -1.5 | A | ||
| Collector Current-Continuous | IC | (Note2) | -0.6 | A | ||
| Collector Current-Pulse | ICM | (Note3) | -4 | A | ||
| Collector-base breakdown voltage | V(BR)CBO | IC=-1mA,IE=0 | -32 | V | ||
| Collector-emitter breakdown | V(BR)CEO | IC=-10mA,IB=0 | -32 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100uA,IC=0 | -6 | V | ||
| Collector cut-off current | ICBO | VCB=-30V,IE=0 | -0.1 | uA | ||
| Emitter cut-off current | IEBO | VEB=-5V,IC=0 | -0.1 | uA | ||
| DC current gain | hFE | VCE=-2V,IC=-0.5A | 100 | 300 | ||
| Collecor-emitter saturation voltage | VCE(sat) | IC=-0.5A,IB=-50mA | -0.35 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-0.5A,IB=-50mA | -1.5 | V | ||
| Base-emitter voltage | VBE(on) | VCE=-2V,IC=-500mA | -1.1 | V | ||
| N-MOSFET | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 5 | V | |||
| Continuous Drain Current | ID | (note 1) | 0.8 | A | ||
| Collector Current-Continuous | ID | (Note2) | 0.69 | A | ||
| Collector Current-Pulse | IDM | (Note3) | 1.4 | A | ||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =16V,VGS = 0V | 100 | nA | ||
| Gate-body leakage current | IGSS | VGS =5V, VDS = 0V | 1 | uA | ||
| Gate threshold voltage | VGS(th) | (note 3) VDS =VGS, ID =250A | 0.44 | 1.1 | V | |
| Drain-source on-resistance | RDS(on) | (note 3) VGS =4.5V, ID =0.55A | 600 | m | ||
| Drain-source on-resistance | RDS(on) | (note 3) VGS =2.5V, ID =0.5A | 650 | m | ||
| Drain-source on-resistance | RDS(on) | (note 3) VGS =1.8V, ID =0.35A | 700 | m | ||
| Diode forward voltage | VSD | (note 3) IS=0.35A, VGS = 0V | 0.5 | 1.1 | V | |
| Power Dissipation, Temperature and Thermal Resistance | ||||||
| Power Dissipation | PC | (Tc=25 ,Note1) | 2.5 | W | ||
| Power Dissipation | PD | 0.7 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 178.6 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| Lead Temperature | TL | 260 | ||||
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