High voltage IGBT device JSCJ CGR75N120F2KAD offering fast soft recovery diode and low Vce saturation voltage

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Product Description

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CGR75N120F2KAD

The CGR75N120F2KAD is a high-performance IGBT utilizing JSCJ's second-generation Trench and Field Stop (FS) structure. It offers a low Collector-Emitter Saturation Voltage (Vce(sat)) and a positive temperature coefficient, making it suitable for parallel applications. Key features include low switching loss, fast and soft recovery freewheeling diode, and good EMI behavior. It is designed for applications such as Solar, UPS & FPC, Welders, and Energy Storage.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Origin: China
Package: TO-247PLUS
Marking: R75N120F2KAD

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Units
Absolute Maximum Ratings
Collector-Emitter Voltage	VCES				1200	V
Gate-Emitter Voltage	VGES				±20	V
Gate-Emitter transient voltage					±30	V
Collector Current, Limited by TJmax	IC				120	A
Collector Current @TC=100	IC			75		A
Plused Collector Current, tp limited by TJmax	ICpulse				225	A
Turn-off latching current	ILM(1)	Vcc =600V, VGE = 15 V, TJ ≤ 150 °C.			225	A
Continuous Diode Forward Current, Limited by TJmax	IF				120	A
Continuous Diode Forward Current @TC=100	IF			75		A
Diode Pulsed Current, Limited by TJmax	IFM				225	A
Power Dissipation @TC=25	PD				395	W
Power Dissipation @TC =100	PD				197
Operating Junction Temperature	TJ		-40		175	°C
Storage Temperature	TSTG		-55		150	°C
Maximum lead temperature for soldering	TL				260	°C
Thermal Characteristics
Maximum IGBT Junction-to-Case	RJC			0.38		°C/W
Maximum Diode Junction-to-Case	RJC			1.1		°C/W
Maximum Junction-to-Ambient	RJA			40		°C/W
Electrical Characteristics
Collector-Emitter Breakdown Voltage	V(BR)CES	VGE=0V,ICE=250uA	1200			V
Zero Gate Voltage Collector Current	ICES	VGE=0V,VCE=1200V			1.0	mA
Gate-Emitter leakage current	IGES	VGE=±20V			±250	nA
Gate-Emitter leakage current	IGES	VGE=±30V			±500	nA
Gate-Emitter Threshold Voltage	VGE(th)	IC=250uA ,VCE=VGE	4.5		7.5	V
Diode Forward Voltage	VF	IF=75A,TJ=25°C		2.1		V
Diode Forward Voltage	VF	IF=75A,TJ=125°C		1.8		V
Diode Forward Voltage	VF	IF=75A,TJ=150°C		1.7		V
Collector-Emitter Saturation Voltage	VCE(sat)	IC=75A,VGE=15V, TJ=25°C		1.65		V
Collector-Emitter Saturation Voltage	VCE(sat)	IC=75A,VGE=15V, TJ=125°C		2.1		V
Collector-Emitter Saturation Voltage	VCE(sat)	IC=75A,VGE=15V, TJ=150°C		2.2		V
Dynamic Parameters
Input Capacitance	Cies	VCE=30V,VGE=0V f=1MHz		7239		pF
Output Capacitance	Coes			269		pF
Reverse Transfer Capacitance	Cres			60.0		pF
Gate Resistance	Rg	VGE=0V, VCC=0V, f=1MHz		0.88		Ω
Total Gate Charge	QG	VCE=960V, IC=75 A, VGE=15V		348		nC
Gate to Emitter Charge	QGE			85.1		nC
Gate to Collector Charge	QGC			194		nC
Switching Parameters
Turn-On Delay Time	td(on)	VCE=600V, IC=75A, Rg=10Ω, VGE=15V, Inductive Load TJ=25°C		64		ns
Current Rise Time	tr			80		ns
Turn-Off Delay Time	td(off)			245		ns
Current Fall Time	tf			63		ns
Turn-On Switching Energy	Eon(3)	Including the reverse recovery of the diode.		6.0		mJ
Turn-Off Switching Energy	Eoff			2.6		mJ
Total Switching Energy	Ets			8.6		mJ