High Collector Current NPN Transistor JSMSEMI S8050 with Excellent HFE Linearity and Complementary S8550

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Product Description

Product Overview

The S8050 is an NPN Silicon Epitaxial Planar Transistor designed for applications requiring high collector current. It offers excellent HFE linearity and high total power dissipation, making it a complementary part to the S8550. This transistor is suitable for various high collector current applications.

Product Attributes

Brand: JSMICRO Semiconductor
Material: Silicon Epitaxial Planar
Package Type: SOT-23
Complementary Part: S8550

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
Collector-Base Voltage	VCBO				40	V
Collector-Emitter Voltage	VCEO				25	V
Emitter-Base Voltage	VEBO				5	V
Collector Current - Continuous	IC				500	mA
Collector Dissipation	PC	@ Ta=25			300	mW
Junction and Storage Temperature	Tj,Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC=100A,IE=0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=0.1mA,IB=0	25			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A,IC=0	5			V
Collector cut-off current	ICBO	VCB=40V,IE=0			0.1	A
Collector cut-off current	ICEO	VCE=20V,IB=0			0.1	A
Emitter cut-off current	IEBO	VEB=5V,IC=0			0.1	A
DC current gain	hFE	VCE=1V,IC=50mA	120		350
DC current gain	hFE	VCE=1V,IC=500mA		50
Collector-emitter saturation voltage	VCE(sat)	IC=500mA, IB= 50mA			0.6	V
Base-emitter saturation voltage	VBE(sat)	IC=500mA, IB= 50mA			1.2	V
Transition frequency	fT	VCE=6V, IC= 20mA, f=30MHz		150		MHz