High Voltage NPN Transistor JSMSEMI MMBTA42 Featuring SOT23 Package and Complementary MMBTA92

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Product Description

Product Overview

The MMBTA42 is an NPN Silicon High Voltage Transistor designed for high voltage switching and amplifier applications. It offers complementary PNP types with the MMBTA92.

Product Attributes

Brand: JSMICRO Semiconductor
Package: SOT-23 Plastic Package
Complementary Type: MMBTA92 (PNP)

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector Base Voltage	VCBO	200	V
Collector Emitter Voltage	VCEO	200	V
Emitter Base Voltage	VEBO	6	V
Collector Current	IC	500	mA
Power Dissipation	Ptot	350	mW	Ta = 25 OC
Thermal Resistance Junction to Ambient	RJA	357	OC/W
Junction and Storage Temperature Range	Tj, Tstg	-55 to +150	OC
DC Current Gain	hFE	25	-	VCE = 10 V, IC = 1 mA
DC Current Gain	hFE	40	-	VCE = 10 V, IC = 10 mA
DC Current Gain	hFE	40	-	VCE = 10 V, IC = 30 mA
Collector Base Cutoff Current	ICBO	0.1	A	VCB = 160 V
Emitter Base Cutoff Current	IEBO	0.1	A	VEB = 6 V
Collector Emitter Saturation Voltage	VCE(sat)	0.5	V	IC = 20 mA, IB = 2 mA
Base Emitter Saturation Voltage	VBE(sat)	0.9	V	IC = 20 mA, IB = 2 mA
Gain Bandwidth Product	fT	50	MHz	VCE = 20 V, IC = 10 mA, f = 100 MHz
Collector Output Capacitance	Cob	4	pF	VCB = 20 V, f = 1 MHz