High voltage PNP transistor JSMSEMI MMBTA92 ideal choice for medium power switching and amplification

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Product Description

Product Overview

The MMBTA92 is a PNP high voltage amplifier transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications, particularly in high voltage driver circuits. A complementary NPN type, the MMBTA42, is also available.

Product Attributes

Brand: JSMICRO Semiconductor
Package Type: SOT-23

Technical Specifications

Symbol	Parameter	Test Conditions	Min.	Max.	Unit
MAXIMUM RATING @ Ta=25
VCBO	Collector-base voltage		-300		V
VCEO	Collector-emitter voltage		-300		V
VEBO	Emitter-base voltage		-5		V
IC	Collector current (DC)		-0.5		A
RJA	Thermal resistance, junction to ambient		417		C/W
PC	Collector dissipation		0.3		W
Tj ,Tstg	Junction and storage temperature		-55 to +150		C
ELECTRICAL CHARACTERISTICS @ Ta=25
V(BR)CBO	Collector-base breakdown voltage	IC=-100A,IE=0	-300		V
V(BR)CEO	Collector-emitter breakdown voltage	IC=-1mA,IB=0	-300		V
V(BR)EBO	Emitter-base breakdown voltage	IE=-100A,IC=0	-5		V
ICBO	Collector cut-off current	IE = 0; VCB = -200V	-	-0.25	A
IEBO	Emitter cut-off current	IC = 0; VEB = -3V	-	-0.1	A
hFE	DC current gain	VCE = -10V; IC= -1mA	25
		VCE = -10V;IC= -10mA	40
		VCE = -10V;IC= -30mA	25
VCE(sat)	Collector-emitter saturation voltage	IC = -20mA; IB = -2mA	-	-0.5	V
VBE(sat)	Base-emitter saturation voltage	IC = -20mA; IB = -2mA	-	-0.9	V
Cob	Collector output capacitance	VCB=-20V,f=1.0MHz	-	6.0	pF
fT	Transition frequency	IC = -10mA; VCE = -20V; f = 100MHz	50	-	MHz