Medium power amplification switching transistor JSMSEMI MMBT5551 NPN epitaxial planar die technology

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Product Description

Product Overview

The MMBT5551 is an NPN general-purpose transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications. A complementary PNP type (MMBT5401) is available, and a lead-free version is also offered.

Product Attributes

Brand: JSMICRO Semiconductor
Package Type: SOT-23
Certifications: Lead-free version available

Technical Specifications

Symbol	Parameter	Test Conditions	Min.	Max.	Unit
V(BR)CBO	Collector-base breakdown voltage	IC=100A,IE=0	180		V
V(BR)CEO	Collector-emitter breakdown voltage	IC=0.1mA,IB=0	160		V
V(BR)EBO	Emitter-base breakdown voltage	IE=10A,IC=0	6		V
ICBO	Collector cut-off current	IE = 0; VCB = 120V		-50	nA
IEBO	Emitter cut-off current	IC = 0; VEB = 4V		-50	nA
hFE	DC current gain	VCE = 5V; IC= 1mA	80	300
		VCE = 5V;IC = 10mA	100
		VCE = 5V;IC = 50mA		-
VCE(sat)	Collector-emitter saturation voltage	IC = 10mA; IB=1mA		0.15	V
VCE(sat)	Collector-emitter saturation voltage	IC = 50mA; IB = 5mA		0.2	V
VBE(sat)	Base-emitter saturation voltage	IC=10mA; IB=1mA		1	V
VBE(sat)	Base-emitter saturation voltage	IC=50mA; IB=5mA		1	V
fT	Transition frequency	IC=10mA; VCB=10V; f=100MHz	100	300	MHz
Cobo	Output capacitance	IE=10mA; VCE =10V; f=1.0MHz		6.0	pF

Symbol	Parameter	Value	Unit
VCBO	Collector-base voltage	180	V
VCEO	Collector-emitter voltage	160	V
VEBO	Emitter-base voltage	6	V
IC	Collector current (DC)	0.6	A
PC	Collector dissipation	0.35	W
RJA	Thermal resistance, Junction to ambient	357	C/W
Tj ,Tstg	Junction and storage temperature	-55 to +150	C