Low Frequency Amplifier Transistor JSMSEMI 2SC5200-O-JSM with 230V Vceo and 16A Collector Current
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Delivery Time:
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Product Description
Product Overview
The 2SA1943/2SC5200 are semiconductor discrete devices designed for low-frequency amplification. They offer high breakdown voltage, low leakage current, and superior frequency characteristics, making them suitable for general amplification circuits, audio power amplifiers, power supply regulation, and other electronic circuits.
Product Attributes
- Brand: JSMICRO Semiconductor
- Origin: Not specified
- Material: Semiconductor
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Value | Conditions |
|---|---|---|
| Main Parameters | ||
| Low Frequency Amplifier Transistor | ||
| Vceo | 230V | |
| Ic | 16A | |
| Pc | 180W | |
| Absolute Maximum Ratings (Tc=25) | ||
| VCBO | 230 V | |
| VCEO | 230 V | |
| VEBO | 6 V | |
| IC | 16 A | |
| IB | 1 A | |
| PC | 180 W | |
| Tj | 150 | |
| Tstg | -55~+150 | |
| Electrical Characteristics | ||
| VCBO | 230 V | IC=1mA, IB=0 |
| VCEO | 230 V | IC=10mA, IB=0 |
| VEBO | 6 V | IC=1mA, IC=0 |
| ICBO | 0.1 mA | VCB=230V, IE=0 |
| ICEO | 0.1 mA | VCE=230V, IB=0 |
| IEBO | 0.1 mA | VEB=6V, IC=0 |
| Hfe*1 | 55 - 160 | VCE=5V, IC=1A |
| Hfe*2 | 35 | VCE=5V, IC=5A |
| VCEsat*1 | 1.5 V | IC=5A, IB=0.5A |
| VCEsat*2 | 2.5 V | IC=8A, IB=0.8A |
| VBEON | 1.5 V | VCE=5V, IC=1A |
| fT | 15 MHZ | VCE=5V, IC=1A |
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